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Kirt Blattenberger,
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RF Cafe began life in 1996 as "RF Tools" in an AOL screen name web space totaling 2 MB. Its primary purpose was to provide me with ready access to commonly needed formulas and reference material while performing my work as an RF system and circuit design engineer. The Internet was still largely an unknown entity at the time and not much was available in the form of WYSIWYG ...

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High-Frequency Integrated Circuits
RF Cafe Quiz #49

All RF Cafe quizzes would make perfect fodder for employment interviews for technicians or engineers - particularly those who are fresh out of school or are relatively new to the work world. Come to think of it, they would make equally excellent study material for the same persons who are going to be interviewed for a job.

Click here for the complete list of RF Cafe Quizzes.

Note: Many answers contain passages quoted in whole or in part from the text.


High-Frequency Integrated Circuits - RF Cafe Quiz #49This quiz is based on the information presented in High-Frequency Integrated Circuits, by Rosin Voinigescu.

Cambridge University Press graciously provided this book.


Note: Some of these books are available as prizes in the monthly RF Cafe Giveaway.







1.  Why are S-parameters preferred for high frequency network analysis?

a)  They make matrix manipulation "S"impler
b)  Open and short circuit terminations are not required
c)  There actually is no reason to prefer them
d)  They are a grandfathered de facto standard




2.  To what temperature is noise figure normally referenced?

a)  0 dBT
b)  0 °C
c)  290 °C
d)  290 K




3.  Where does the Quantum Confinement (QC) effect occur in a MOSFET?

a)  At the source
b)  At the gate
c)  At the drain
d)  Throughout the entire device




4.  Why is substrate resistance important?

a)  It makes no difference
b)  It sets the device impedance
c)  It drives up costs
d)  It degrades fMAX and FMIN




5.  At what rate has MOSFET gate shrink scaling factor (√2) occurred since the 1970s?

a)  Every year
b)  Every 2-3 years
c)  Every 4-5 years
d)  Every decade




6.  Who developed the first High Electron Mobility Transistor (HEMT)?

a)  Motorola (USA)
b)  China Global Semiconductor (China)
c)  Fujitsu (Japan)
d)  Thomson Semiconductors (France)




7.  When is coplanar waveguide (CPW) more desirable than microstrip on a semiconductor substrate?

a)  Never
b)  Always
c)  When a ground plane located on the top of the IC is not feasible.
d)  When the frequency is greater than 1 GHz




8.  What is the definition of Power Added Efficiency (PAE) of a power amplifier?

a)  ∑(POUT, PIN, PDC)
b)  ∏(POUT, PIN, PDC)
c)  (PRF - PIF) * PDC
d)  (POUT - PIN) / PDC




9.  What is the best type of biasing for an Low Noise Amplifier (LNA) at high temperature?

a)  Proportional to Absolute Temperature (PTAT) bias
b)  Polynomial Heuristical with Absolute Temperature (PHAT) bias
c)  Synergistic to Absolute Temperature (STAT) bias
d)  Complimentary to Absolute Temperature (CTAT) current mirror bias




10.  How are in-phase (I) and quadrature (Q) components of an RF signal generated?

a)  With a 90° (quadrature) equal amplitude coupler
b)  By converting to digital then delaying the signal by 1/4 of a clock cycle
c)  By adding signal until a 90° phase shift is obtained
d)  By adding signal until a -90° phase shift is obtained





Need some help? Click here for the answers and explanations.