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Note: Many answers contain passages quoted from the text.
This quiz is based on the information presented in
Handbook of RF and Microwave Power Amplifiers, by John L. B. Walker.
Cambridge University Press graciously provided
Whether you are an RF transistor designer, an amplifier designer or a system designer,
this is your one-stop guide to RF and microwave transistor power amplifiers. A team of expert authors brings you
up to speed on every topic, including: devices (Si LDMOS and VDMOS, GaAs FETs, GaN HEMTs), circuit and amplifier
design (discrete, hybrid and monolithic), CAD, thermal design, reliability, and system applications/requirements
for RF and microwave transistor amplifiers. Covering state-of-the-art developments and emphasizing practical communications
applications, this is the complete professional reference on the subject.
What are the two primary parasitic components of a ceramic package for an RF power amplifier?
resistance and lead inductance
b) Thermal resistance and lead capacitance
c) Lead frame capacitance
and wire bond inductance
d) Lead frame inductance and wire bond capacitance
2. What change to coaxial connectors is necessary to accommodate higher frequencies?
Physical size decreases
b) Physical size increases
c) Metallurgical compositions changes are needed
d) No change is required
3. What are the ramifications of the results
of Question 2?
a) Costs increase
b) Power handling increases
c) Power handling decreases
d) There are none
4. What is(are) the broad class(es) of RF power
a) Bipolar junction transistors (BJTs)
b) Metal oxide semiconductor field effect
c) Gallium devices (GaAs and GaN)
d) All the above
5. How is the average efficiency of a Class B amplifier affected by power back-off?
a) Degrades as the square root of the power back-off level
b) Increases as the square root of
the power back-off level
c) Degrades linearly with the power back-off level
linearly with the power back-off level
6. What breakdown condition(s)
is(are) typically specified for FETs?
a) Gate-source (BVgs)
b) Gate-drain (BVgd)
c) Drain-source (BVds)
d) All the above
is the crest factor (CF) related to peak signal-power-to-average-signal-power (PAPR)?
a) CF = √(PAPR)
b) CF = PAPR
c) CF = PAPR2
d) CF is not related to PAPR
8. What is the primary limitation of RF power transistor applications?
b) Parasitic elements
c) Heat dissipation
What is a fundamental problem with using Newton's Method in a harmonic-balance simulation?
Method relies on the classical model
b) Newton's Method is useful only in linear simulations
Newton's Method is not guaranteed to converge on a solution
d) There is no issue with using Newton's Method
10. What is a limitation on RF power amplifier (RFPA) design margin requirements?
a) Test equipment precision and accuracy
b) Schedule constraints
c) Power handling
d) Bias voltage variation
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Posted August 3, 2013