One of the news websites I frequent had a
note about this "Evolution of Transistor Innovation" video produced by Intel. In
a span of five minutes you are taken on a journey from the early planar
MOSFET (metal oxide
semiconductor field effect transistor) days to
today's world of 3-dimensional, non-planar
FINFET (fin field effect
transistor). Physical layout, materials, and lithography advances allowed gate
lengths to shrink from 12 μm in the early 1970s to a mere 10 nm by 2020.
Switching speeds have gone up, die sizes have gone down, power consumption per
gate has decreased, and reliability has increased. At every juncture we have
been served stories of a certain end to
Moore's law (a doubling
of gate count every 18-24 months), and thanks to dedicated engineers and
scientists the prognosticators have been proven wrong.
Posted March 8, 2022
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