Press Release Archives:
2025 |
2024 |
2023 |
2022 |
2021
2020 |
2019 |2018 | 2017 | 2016
2015
Content is copyright of company represented. Page format, custom text and
images are RF Cafe copyright - do not distribute. Note: Beginning
March 2025, posting of press releases will cost $100 each for non-advertisers.
Radiation Tolerant Driver Is Ideal for Space, Defense and Avionic Markets Where
Size, Weight and Power Are Critical.
Teledyne e2v HiRel 100 V High-Speed 20 MHz FET and
GaN Transistor Driver Flip Chip Die
Milpitas, California - March 3, 2022 -
Teledyne e2v HiRel announces the new
TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high
switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne
HiRel's 100 V high reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital
Point-of-Load (POL) modules and space motor drives.
The TD99102 is an integrated high-speed driver designed to control the gates
of external power devices such as enhancement mode gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) and power MOSFETs. The outputs of the TD99102 are capable
of providing switching transition speeds in the sub-nanosecond range for switching
applications up to 20 MHz. The TD99102 is optimized for matched dead time and offers
best-in-class propagation delay to improve system bandwidth. High switching speeds
result in smaller peripheral components and enable innovative designs for high reliability
orbital motor driver and POL applications.
The TD99102 is available as a bumped, flip chip die to enable minimum design
footprint required for high-speed switching power applications. The TD99102 is manufactured
on Peregrine's UltraCMOS® process, a patented advanced form of silicon-on-insulator
(SOI) technology, offering the performance of GaAs with the economy and integration
of conventional CMOS. It features 100 krad(Si) Total Ionizing Dose (TID), Single
Event Latch-up (SEL) immunity and dead-time control, the new product offers 2A peak
source and 4A peak sink current.
"We've been asked for drivers that get the most out of our 100 V GaN HEMT transistors,"
said Mont Taylor, VP of Business Development for Teledyne e2v HiRel. "The TD99102's
fast edge speeds and radiation tolerance make them ideal for the latest LEO and
MEO constellations where efficiency is key."
The TD99102 is available for ordering and immediate purchase from Teledyne e2v
HiRel or an authorized distributor.
About Teledyne e2V HiRel Electronics
Teledyne HiRel's innovations lead developments in space, transportation, defense,
and industrial markets. HiRel's unique approach involves listening to the market
and application challenges of customers and partnering with them to provide innovative
standard, semi-custom or fully custom solutions, bringing increased value to their
systems.
About Teledyne Defense Electronics
Serving Defense, Space and Commercial sectors worldwide,
Teledyne Defense Electronics
offers a comprehensive portfolio of highly engineered solutions that meet your most
demanding requirements in the harshest environments. Manufacturing both custom and
off-the-shelf product offerings, our diverse product lines meet emerging needs for
key applications for avionics, energetics, electronic warfare, missiles, radar,
satcom, space, and test and measurement.
Contact Info:
Sharon Fletcher
Teledyne Defense Electronics
Phone: +1 323-241-1623
E-Mail: sharon.fletcher@teledyne.com
Web: www.teledynedefelec.com
Posted March 8, 2022
|
