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Measured data of 4x25 m m unit cell in a pre - matched test circuit
Combiner and driver modules assembled on top of a heat sink.
Torrance, California – 30 April 2018 - QuinStar has established new power benchmarks
for SSPAs operating at frequencies above 100 GHz. We have successfully demonstrated
two GaN MMIC amplifiers operating at F-band frequencies: The first producing an output
power of 28-29 dBm from 102 to 118 GHz, while the second, a wideband design,
delivering an output power of greater than 25 dBm from 98 to 122 GHz. Lastly, we
have assembled and tested a multi-MMIC SSPA producing an output power of 2-3 W over
the 102–116 GHz band. These findings were presented at IMS 2018.
F - Band, GaN Power Amplifiers (excerpt -
download full paper here)
By Edmar Camargo, James Schellenberg, Lani Bui , and Nicholas Estella QuinStar Technology
Abstract - This paper reports the design and performance of two new GaN MMIC amplifiers
operating at F-band frequencies. The first design produces 28-29 dBm from 102
to 118 GHz, while the second, a broadband design, produces a minimum of 25 dBm
across the 98 to 122 GHz band. Both designs exhibit a small - signal gain of 20 dB.
In addition, we report a multi - MMIC SSPA with an output power of 2 -3 W from 102
to 116 GHz. These are the first reported GaN power results above 100 GHz and the
highest power level for any solid - state technology at this frequency.
I. Introduction
Currently there is a need for solid - state power amplifiers (SSPAs) , operating at
105-115 GHz , in support of NASA Earth Science missions. These SSPAs , with power
levels of 1-4 W , are required to drive LO multiplier chains in Terahertz receivers.
As the demand for higher data rates (bandwidth) increases, future military and 5G communications
systems are also expected to benefit from this F - band SSPA technology. Recent GaN MMIC
work at E and W - band frequencies has produced MMICs with power levels of several watts
[1-4], and utilizing power combining techniques , SS PAs with output power levels of
40 W are emerging [5]. Despite rapid progress at E and W-band, there is little published
work on solid - state power above 100 GHz. There are, however, three notable exceptions:
Teledyne has reported 85 mW at 118 GHz [6] and 250 mW at 180 GHz [7] using
InP HBT technology, Northrop Grumman has reported 75 mW at 210 GHz [8] , and
JPL has demonstrated a 25 mW wideband MMIC covering the 105 to 140 GHz band
[9]. In all three cases, InP technology was employed . To the author's knowledge, no
one has reported GaN results above 100 GHz. This paper presents GaN MMICs operating
at frequencies of up to 122 GHz with output power levels of up to 29 dBm (0.8 W).
Download full paper here
About QuinStar
QuinStar Technology, Inc. designs and manufactures millimeter-wave products for communication,
scientific, and test applications. We excel in millimeter-wave products, microelectronic
assembly, rapid prototyping, and mass customization. As a result, we serve both established
and emerging markets with system applications in the commercial, scientific, and defense
arenas. We are AS9100:2009 Rev C / ISO 9001:2008 certified.
Our work helps advance emerging applications in wireless technologies and radars.
Capitalizing on our past engineering achievements, QuinStar leads the way into the future.
Contact:
QuinStar Technology, Inc. 24085 Garnier Street Torrance, CA 90505
Tel: 1+310-320-1111 E-mail:
sales@quinstar.com
Web: www.quinstar.com
Posted July 31, 2018
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