Motorola PNP & NPN Oxide-Passivated Silicon Annular Transistors
May 4, 1964 Electronics Magazine

May 4, 1964 Electronics [Table of Contents] Wax nostalgic about and learn from the history of early electronics. See articles from Electronics, published 1930 - 1988. All copyrights hereby acknowledged.

Everything is relative... just ask Albert Einstein. The use of terms like "contemporary," "modern," etc., in the titles of books has always annoyed me. They would be okay if the titles also included the year or at least the decade to which the claim applies. Not quite as nefarious is the claim of "high frequency" when describing electronics components since it is safe to assume that most readers understand the era to which it applies. To a lesser extent that goes for "high voltage" and "high current." This 1964 advertisement for Motorola's Oxide-Passivated Silicon Annular Transistors appeared in Electronics magazine touting the high frequency capability for switching and RF amplification. The 2N2501 "switching transistor" for instance has a gain bandwidth product (f_T) of 350 MHz at a current of 10 mA. The "general purpose" high current (1000 mA) 2N3244 has an f_T of 175 MHz. Transistor evolution has produced devices which operate into the millimeter wave (even light) realm and are fabricated with semiconductor compounds that were only laboratory curiosities at the time.

Motorola PNP & NPN Oxide-Passivated Silicon Annular* Transistors

Motorola PNP & NPN Oxide-Passivated Silicon Annular* Transistors for Every High-Frequency Application!

High Current

• Optimum Switching... 300 mA to 800 mA

• BV_CEO to 50 V

PNP 2N3244, 45

NPN 2N3252, 53

New PNP and NPN silicon annular transistors designed for high-current line and core driver applications as high as 1 ampere. Featuring the 6-pointed geometry Star† transistors, and available in the high power-dissipation solid-header TO-5 package, these new Motorola devices are the fastest silicon switches available in their current range.

Look to Motorola for Continued Leadership in Silicon Transistors... The low-leakage annular process, monometallic construction for high-temperature reliability, and epitaxial high-frequency performance are only a few of the reasons why you should specify Motorola for your silicon transistor requirements.

Medium Current

• Optimum Switching ... 10 mA to 400 mA

• BV_CEO to 60V

PNP

2N2904-07

2N2904A-07A

NPN

2N2218-22

2N2218A-22A

For complementary switching applications at medium-current ranges, Motorola offers both PNP and NPN silicon Star transistors. Designed specifically for general purpose switching and amplifier applications, the popular Star transistors are available in both the TO-5 and TD-18 packages. (New "A" versions feature a minimum beta of 40 from 100μA to 500μA).

Silicon annular devices featured on these pages are immediately available through your Motorola Semiconductor Distributor or District Office. Call them today!

Low Current

• Optimum Switching ... 1 mA to 100 mA

• BV_CEO to 40V

PNP

2N3248, 49

2N3250, 51

NPN

2N834

2N2501

With the addition of transistor types 2N3248-51 in the small-geometry configuration, Motorola is now able to offer both PNP and NPN low-level, ultra-high-speed annular devices for switching and amplifier applications. Available in the standard TO-18 package, these new logic devices will meet virtually all of your low-level logic switching requirements.

* The Annular process provides true silicon oxide passivation and eliminates uncontrolled "channeling" and leakage to the edges of the transistor die. Patents pending.

† Trademark of Motorola Inc.

Motorola Semiconductor Products Inc.

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