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Hittite Press Release - March 26, 2010
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Hittite's New SMT Power Amplifier is Ideal for WiMAX and LTE/4G Applications
New Surface Mount PA Features High Efficiency and Low EVM!
 Chelmsford,
MA, March 26, 2010 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for
communication & military markets, announces the release of a new GaAs InGaP HBT MMIC power amplifier which is
ideal for automotive, broadband, WiMAX and LTE/4G applications from 2.3 to 2.8 GHz.
 The
HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power Amplifier which rated from 2.3 GHz to 2.8
GHz and provides up to 31 dB of gain. This high efficiency amplifier operates from a single +5 V supply, and
achieves 28 % power added efficiency (PAE) at +33 dBm of saturated output power. Three power control pins can be
used to reduce the RF output power of the PA, or for full power down of the amplifier to conserve DC power. The
integrated output power detector pin (VDET) is internally coupled and provides excellent measurement accuracy
while requiring only a single external decoupling capacitor. With an OFDM output power of +25 dBm (64 QAM, 54
Mbps), the
HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5 %, making it ideal for WiMAX and LTE/4G
applications. This high performance amplifier is packaged in a compact 4 x 4 mm QFN SMT package, requires a
minimum of external matching components, and is rated for operation from -40 °C to +85 °C.
Samples for all die products are available from stock and can be ordered via the company’s e-commerce site or
via direct purchase order. Released data sheets are available on-line at
www.hittite.com.
About Hittite
Hittite Microwave Corporation is an innovative designer and manufacturer of analog and
mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave
applications covering DC to 110 GHz. Our RFIC/MMIC products are developed using state-of-the-art GaAs, GaN,
InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and
PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar
applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications,
Military, Test & Measurement, and Space markets.
Contact
Beth McGreevy
MarCom Manager
mcgreevy@hittite.com
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
sales@hittite.com www.hittite.com
Posted 3/31/2010 |
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