M/A-COM Announces 4th Generation 100W
GaN on Silicon Wideband Transistor

MACOM's New MAGX-100027-100C0P Features Optimal Efficiency and Gain Performance

Lowell, Mass, September 9, 2015–M/A-COM Technology Solutions Inc. ("MACOM") (NASDAQ: MTSI), a leading supplier of high performance analog RF, microwave, and optical semiconductor products, today announced the new MAGX-100027-100C0P, a wideband transistor optimized for DC-2.7 GHz operation and built using proprietary 4th generation GaN on Silicon (GaN on Si) process is sampling today. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.

The MAGX-100027-100C0P supports CW, pulsed, and linear operation with output power levels up to 100 W (50 dBm). Featuring 50 V operation, this device offers CW operation of 18.3 dB gain at 2.45 GHz, and 70% drain efficiency. For pulsed operation, the MAGX-100027-100C0P boasts 18.4 dB gain at 2.7 GHz and 71% drain efficiency. This 100% RF tested transistor is available in an industry standard plastic package with bolt down flange.

Delivering performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology, 4th generation GaN (Gen4 GaN) is positioned to break the final technical and commercial barriers to mainstream GaN adoption. Gen4 GaN delivers greater than 70% peak efficiency and 19 dB gain for modulated signals at 2.7 GHz, which is similar to GaN on SiC technologies, and more than 10 percentage points greater efficiency than LDMOS. It also delivers power density that is more than four times that of LDMOS.

"This Gen4 GaN transistor provides optimal performance for customers," said Gary Lopes, Product Manager, MACOM. "The MAGX-100027-100C0P is an ideal candidate for customers looking to support rugged applications and experience the solid reliability that is offered by MACOM GaN solutions. Gen4 GaN products extend the innovation and commercialization trajectories of earlier generations of GaN on Si, which have demonstrated clear, field-proven reliability in harsh environmental conditions for more than five years."

To learn more about the MAGX-100027-100C0P visit MACOM's booth #235 at EuMW 2015, September 8 – 10, 2015 in Paris, France. The MAGX-100027-100C0P is now available for sample. Final datasheets and additional product information can be obtained from the MACOM website at: www.macom.com

About M/A-COM

M/A-COM Technology Solutions Holdings, Inc. (www.macom.com) is a leading supplier of high performance analog RF, microwave, millimeterwave and photonic semiconductor products that enable next-generation Internet and modern battlefield applications. Recognized for its broad catalog portfolio of technologies and products, MACOM serves diverse markets, including high speed optical, satellite, radar, wired & wireless networks, automotive, industrial, medical, and mobile devices. A pillar of the semiconductor industry, we thrive on more than 60 years of solving our customers' most complex problems, serving as a true partner for applications ranging from RF to Light.

Headquartered in Lowell, Massachusetts, M/A-COM Tech is certified to the ISO9001 international quality standard and ISO14001 environmental management standard. M/A-COM Tech has design centers and sales offices throughout North America, Europe, Asia and Australia.

MACOM, M/A-COM, M/A-COM Technology Solutions, M/A-COM Tech, Partners in RF & Microwave, The First Name in Microwave and related logos are trademarks of MACOM. All other trademarks are the property of their respective owners.

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Posted September 11, 2015