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TriQuint - Press Release 1-8-2008
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TriQuint
Wins $4.5M Navy Contract for High Voltage, High Power GaAs Amplifiers
TriQuint Will Develop
New GaAs Technology to Improve Power, Efficiency and Lower the Overall
Cost of Naval Systems High-Frequency Amplifiers
HILLSBORO, OR & RICHARDSON, TX (USA) – October
6, 2008 – TriQuint Semiconductor, Inc (NASDAQ: TQNT),
a leading RF products manufacturer and foundry services provider, today
announced that the Office of Naval Research (ONR) has awarded TriQuint
a 21-month, $4.5 million contract to advance manufacturing methods used
to produce high-power, high-frequency gallium arsenide (GaAs) amplifiers.
TriQuint was chosen based on its experience developing high-performance,
high-reliability amplifiers for a wide range of defense and aerospace
applications, according to Dr. David Fanning, TriQuint Contract Program
Manager.
“Winning this contract demonstrates the government’s
confidence in TriQuint’s ability to develop the critical technologies
needed for Department of Defense applications. High voltage gallium
arsenide is a tested and proven technology that exhibits high reliability
using existing processes and materials, ideally suited for military
and commercial production programs,” explained Dr. Fanning.
He added that TriQuint’s high voltage pHEMT (pseudomorphic high electron
mobility transistor) GaAs technology will be the focus of the new ONR
program since it provides higher power density (more power per square
millimeter of surface area) and efficiency compared to other processes.
These performance characteristics are required for critical Navy applications
including phased array radar, electronic warfare and communications
systems. TriQuint has been developing high voltage gallium arsenide
pHEMT technology since 2000; advanced X-band and S-band versions of
that process were developed under previous ONR contracts.
Dr.
Fanning explained that the new program’s objectives are to extend the
use of the high voltage gallium arsenide pHEMT technology to higher
frequencies. In the first phase of the program TriQuint will develop
a new high-frequency, high-power device technology and will extract
circuit design models. In the second phase, TriQuint will design and
fabricate high power monolithic microwave integrated circuits (MMICs).
TriQuint is the sole contractor and is performing the work at its Richardson,
Texas facility.
Remarking about the new contract, Dr. Gailon
Brehm, TriQuint’s Defense and Aerospace Product Marketing Director said,
“TriQuint currently supplies high volume, cost-effective foundry services
and standard products based on both low- and high-voltage gallium arsenide.
This enhanced high frequency technology will extend the capability of
our GaAs process family to the higher voltage needed for both military
and commercial applications at frequencies above 20 GHz. As such it
will provide a new capability intermediate between today’s GaAs and
the emerging GaN technology.”
The Office of Naval Research in
Arlington, VA is the contracting agency (N00014-08-C-0636) for TriQuint
Semiconductor’s latest advanced GaAs research and production development
program.
TriQuint is a leading manufacturer of high-performance,
high-reliability integrated circuits for communications and radar programs
as well as other advanced defense and aerospace systems. TriQuint offers
customers a wide range of expertise in high-voltage GaAs pHEMT, other
GaAs-based processes, gallium nitride (GaN), surface acoustic and bulk
acoustic wave (SAW / BAW) technologies. TriQuint’s technological leadership
as well as its expertise in low-cost packaged devices and MMICs has
made the company a leading supplier of RF system components to major
defense contractors and leading government laboratories such as the
Office of Naval Research and DARPA (Defense Advanced Research Projects
Agency).
For more information about TriQuint products for defense
and aerospace, visit
www.triquint.com. Register for product updates and our newsletter
at: www.triquint.com/rf.
FORWARD LOOKING STATEMENTS
This TriQuint Semiconductor,
Inc. (NASDAQ: TQNT) press release contains forward-looking statements
made pursuant to the Safe Harbor provisions of the Private Securities
Litigation Reform Act of 1995. Readers are cautioned that forward-looking
statements involve risks and uncertainties. The cautionary statements
made in this press release should be read as being applicable to all
related statements wherever they appear. Statements containing such
words as ‘leading’, ‘exceptional’, ‘high efficiency’, ‘key role’, ‘leading
supplier’, or similar terms are considered to contain uncertainty and
are forward-looking statements. A number of factors affect TriQuint’s
operating results and could cause its actual future results to differ
materially from any results indicated in this press release or in any
other forward-looking statements made by, or on behalf of, TriQuint
including, but not limited to: those associated with the unpredictability
and volatility of customer acceptance of and demand for our products
and technologies, the ability of our production facilities and those
of our vendors to meet demand, the ability of our production facilities
and those of our vendors to produce products with yields sufficient
to maintain profitability, as well as the other “Risk Factors” set forth
in TriQuint’s most recent 10-Q report filed with the Securities and
Exchange Commission. This and other reports can be found on the SEC
web site, www.sec.gov.
A reader of this release should understand that these and other risks
could cause actual results to differ materially from expectations expressed
/ implied in forward-looking statements.
FACTS ABOUT
TRIQUINT
Founded in 1985, we “Connect the Digital World
to the Global Network”™ by supplying high-performance RF modules, components
and foundry services to the world's leading communications companies.
Specifically, TriQuint supplies products to four out of the top five
cellular handset manufacturers, and is a leading gallium arsenide (GaAs)
supplier to major defense and space contractors. TriQuint creates standard
and custom products using advanced processes that include gallium arsenide,
surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies
to serve diverse markets including wireless handsets, base stations,
broadband communications and military. TriQuint is also lead researcher
in a 3-year DARPA program to develop advanced gallium nitride (GaN)
amplifiers. TriQuint, as named by Strategy Analytics in August 2008,
is the number-three worldwide leader in GaAs devices and the world’s
largest commercial GaAs foundry. TriQuint has ISO9001 certified manufacturing
facilities in Oregon, Texas, and Florida and a production plant in Costa
Rica; design centers are located in North America and Germany. Visit
TriQuint at www.triquint.com/rf
to receive new product information and to register for our newsletters.
Dr. Gailon Brehm
Director – Defense & Aerospace
Product Marketing
TriQuint Semiconductor, Inc.
Tel: +1 (972) 994-3896
Fax: +1 (407)
994-8504
E-mail:
gbrehm@tqs.com
Media Contact: Mr. Mark
Andrews
Strategic MarComm Manager
TriQuint Semiconductor
Tel:
+1 (407) 884-3404
Mobile: +1 (407) 353-8727
E-mail:
mandrews@tqs.com
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