|
 |
RF simulation using Pspice - RF Cafe Forums
|
| ARJ
|
|
Post subject: RF simulation using Pspice
Posted: Mon Oct 29, 2007 5:20 pm
|
|
Joined: Mon Oct 29, 2007
5:07 pm
Posts: 4 |
Hi all, I am trying to simulate BGA 427
Chip by Infineon. I was using ADS but as infineon
doesnt have a model for ADS, switched over to Pspice.
I was wondering can i simulate the model
using the transistor's parameter given in the datasheet.
I am using Pspice's 2N2222 Transistor as a replacement.
http://www.ortodoxism.ro/datasheets/inf ... bga427.pdf
for the datasheet. My initial results are
Gain of 46 dB at 200 MHz, 36 dB at 1 GHz.
Thanks ARJ
|
|
| |
|
 |
|
Feng |
|
Post subject:
Posted: Tue Oct 30, 2007 1:14 pm
|
|
| |
| Colonel |
 |
Joined: Sun Mar 19, 2006
5:25 pm
Posts: 30
Location: Burnaby
|
|
Hi ARJ,
I am not sure what kind of simulation
you are going to do in ADS, but for certain simulations
such as S-parameter simulation, you may think about
BGA427 as a 2-port component, and use 2-Port S-parameter
file component, which you can find it in Data Items.
However, this method has many limitions due to limited
data given in the data sheet.
Or you may
try to build a model according to the Transistor
Chip Data T1 on the data sheet. The possible models
are in the Device BJT components in ADS. There may
be one suit for your application.
|
|
| |
|
|
|
|
ARJ |
|
Post subject:
Posted: Fri Nov 02, 2007 4:48 pm
|
|
Joined: Mon Oct 29, 2007
5:07 pm
Posts: 4 |
|
Thanks Feng
sorry for being late. I have
to renew my Agilent ADS ID and that took time.
Now i have got the ID i am ready to try this
out.
I guess building a model would be a
good idea. The circuit isnt that big. Moreover i
need a good simulation. U mentioned to go to Device
BJT components. I have no clue as i am only a beginner.
Could u please let me know how to do that.
Thanks
Anil
|
|
| |
|
|
|
|
Feng |
|
Post subject:
Posted: Sat Nov 03, 2007 2:01 am
|
|
| |
| Colonel |
|
|
Joined: Sun Mar 19, 2006
5:25 pm
Posts: 30
Location: Burnaby
|
|
Hi ARJ,
You are welcome. The components
with a square frame in the Devices_BJT may be the
candidates for BJT modeling. You may try the component
of BJT_Model and verify it first by simulating it
in a given situation. After it is proved to suit
for the required condition, then you can do what
you want by taking advantage of this transistor
model.
I hope it can help. Good luck.
|
|
| |
|
|
|
|
ARJ |
|
Post subject:
Posted: Thu Nov 08, 2007 6:52 pm
|
|
Joined: Mon Oct 29, 2007
5:07 pm
Posts: 4 |
Hi Feng, Thanks for your advice.
The amplifier I am modeling is a Si- MMIC BGA
427 amplifier. Can i model it using a BJT given
in ADS. The reason for this question is that i tried
modeling the amplifier according to the parameters
given in the datasheet.
http://www.ortodoxism.ro/datasheets/inf ... bga427.pdf
I used the Devices_BJT from the component
list. The results are totally different. The
amplifier doesnt amplify the signal at all.
Could u please help me out. Thanks
Anil
|
|
| |
|
|
|
|
Feng |
|
Post subject:
Posted: Thu Nov 08, 2007 8:33 pm
|
|
| |
| Colonel |
|
|
Joined: Sun Mar 19, 2006
5:25 pm
Posts: 30
Location: Burnaby
|
|
Hi ARJ,
I review the datasheet again and
list considerations as following.
1. Only
parameters of transistor T1 and C-E diode are given
in the datasheet, but in fact there are two transistor
T1 and T2 in the package. So you may suppose that
they have the same parameters when you were modeling.
However, both we can not make sure they are identical.
2. Parasitic parameters may play an unignorable
role in RF circuit. so you may include them, which
is given just above the T1 chip data in the datasheet.
3. Verify your model first before you start
your circuit simulation. Meanwhile, pay close attention
to what kind of simultor you used. It depends on
your goals.
I hope it is helpful.
|
|
| |
|
|
|
|
ARJ |
|
Post subject:
Posted: Sun Nov 11, 2007 9:55 pm
|
|
Joined: Mon Oct 29, 2007
5:07 pm
Posts: 4 |
|
Hi Feng,
Does the capacitors and inductors
due to Package should be included in the parasitics??
and does those S- parameters are for the
Transistor or for the whole chip??
thanks
for all your help....
Anil
|
|
| |
|
|
|
|
Feng |
|
Post subject:
Posted: Sun Nov 11, 2007 10:13 pm
|
|
| |
| Colonel |
|
|
Joined: Sun Mar 19, 2006
5:25 pm
Posts: 30
Location: Burnaby
|
|
Hello ARJ,
You are welcome.
For
a precise modeling or high frequency simulaiton,
parasitic effect should be counted in. In my opinion,
I think the S-parameters are for the whole chip
because they are measurable and can be measured.
|
|
Posted 11/12/2012
|
|
|
|
|
