GaN-on-Silicon Technology Enables Scalable HEMTs

Worldwide headline stories
Post Reply
KirtB
Site Admin
Posts: 263
Joined: Mon Jun 26, 2017 7:53 pm
Location: Erie, Pennsylvania
Contact:

GaN-on-Silicon Technology Enables Scalable HEMTs

Post by KirtB » Tue Jul 25, 2017 9:52 am

GaN-on-Silicon Technology Enables Scalable HEMTs

"A team of researchers at the University of Illinois has recently advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. Working with industry partners Veeco and IBM, the team created the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes. According ..." https://www.everythingrf.com/News/details/3466-Advances-in-GaN-on-Silicon-Technology-to-Enable-Scalable-High-Electron-Mobility-Transistors
Kirt Blattenberger
Webmaster


Post Reply

Who is online

Users browsing this forum: No registered users and 0 guests