GaN-on-Silicon Technology Enables Scalable HEMTs

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GaN-on-Silicon Technology Enables Scalable HEMTs

by KirtB » Tue Jul 25, 2017 9:52 am

GaN-on-Silicon Technology Enables Scalable HEMTs

"A team of researchers at the University of Illinois has recently advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. Working with industry partners Veeco and IBM, the team created the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes. According ..." https://www.everythingrf.com/News/details/3466-Advances-in-GaN-on-Silicon-Technology-to-Enable-Scalable-High-Electron-Mobility-Transistors

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