RAHUL SADHU

E–Mail : rahul.sadhu@rediffmail.com
       rahul.sadhu@gmail.com

Mobile No : 09823939100

OBJECTIVE: Looking for challenging and creative role, where I can expose my
Knowledge and learn new things. To work in an organization that will utilize and enhance my skill sets in the field of Analog, RF IC circuit design and applications.

JOB RESPONSIBILITY:

• Design, simulation and Layout of RF circuits.
• DRC,LVS of RF circuits.
• Evaluate different microwave product to assure their quality.
• Troubleshooting and testing of RFICs.

PROJECTS HANDLED:

RF Arrays Systems Pvt. Ltd. (Nagpur) : (July 2006 – Present )
Designation: Design Engineer (RFIC/MMIC)

• Title: Power Amplifier( 2.4 – 2.7 GHz): Currently working on this project to achieve 21 dB gain(±1 dB gain flatness) and 23 dBm output power(one dB compression point) using 0.7 μm MESFET process. It requires Vdd=+ 5.0 V(drain) and Vg= -0.75 V(gate) for biasing.

• Title: Broadband Amplifier (0.5-3.5 GHz) :The Amplifier delivers 11 dB gain(± 0.75 dB flatness) in the whole band and having 1 dB compression point of 19 dBm. It is fabricated in 0.7 μm MESFET amplifier process. It uses a single +5 Volt supply and needs external bias circuit to operate.

• Title: SPDT Reflective/Terminated Switch (DC- 2 GHz): The SPDT (Single Pole Double Throw) switch is designed and fabricated using 0.7 μm MESFET switch process (GaAs) and packaged in SO8 plastic package. The switch is having Insertion Loss of 0.8 dB max for Reflective type and 1.0 dB max for Terminated type.
• Title: DPDT Reflective Switch(DC- 6GHz): The DPDT(Double Pole Double Throw) switch is having good Insertion Loss of 1.0 dB max(6 GHz) and 1 dB Compression point(P1dB) of 18dBm (0 / -5 volt). It is also fabricated in 0.7 μm GaAs MESFET switch process and available in S016 plastic package.

Microqual Techno Pvt. Ltd – Bangalore: (Dec 2005 - Jun 2006)
Designation: Trainee Engineer

• Low Noise Amplifier(1.2 – 1.3 GHz): The amplifier is mounted on 0.8 mm glass epoxy
Substrate and requires two supply (gate and drain bias), bias network, coupling and by-pass capacitor to work. It delivers 2 dB noise figure,14 dB gain and P1dB of -10 dBm at Vdd=+5 V, Id=25mA.

SOFTWARE SKILLS:

• Agilent Advance Design System.
• AWR Microwave Office.
• Zeland IE3D.
• ICED
• Ansoft Ensemble

ACADEMIC QUALIFICATION:

University Of Delhi (South Campus)
Dept. of Electronic Science
M.Tech (Microwave Electronics)

Utkal University
A.B. Institute Of Technology
B.E (Electronics and Telecommunication)

Test Equipment Familiarity:

Hands on experience with modern testing equipment (Agilent Technologies).
• Vector Network Analyzer.
• Spectrum Analyzer.
• Signal Generator.
• Power Supply.

STRENGTHS:

Hardworking and self motivated individual with strong enthusiasm for learning. Ability to enter new situations and quickly come up to speed on requirements, then propose and implement solutions. I have successfully worked as team member and has leading ability.

PERSONAL DETAILS:

Languages Known : English, Hindi , Bengali
Permanent Address : Qr.-A9/6,Amulya kanon, Serampore, West Bengal, INDIA
Hobbies : Listening music, Reading, Making Friends