Amitabh Chowdhary
Beilenpad 21,
6835GV Arnhem,
The Netherlands
Phone: (H) 0031-26-3270590
(W) 0031-24-3532594
(M) +31641590100
At Home: Between 8 PM to 8AM (GMT + 1)
On Mobile: Any time
Email: amitabhchowdhary@hotmail.com

Objective: Looking for highly challenging job opportunity (Design/Product
                  Development/Research/customer support/field application/RF engineering
                  management)

Personal Details

Date of Birth: 08.06.1966

Sex: Male

Nationality: Nederlander (Dutch)

WORK HISTORY

Present job

Duration: July, 2001 - still working. NXP Semiconductors.

Details: Presently working for RF Power group mostly engaged in Base station device developments (Discrete and High power MMICs).

Job 2

Duration: April, 2000 - July,2001.Philips Semiconductors, The Netherlands.

Details: Worked as Senior RF design engineer for Power amplifiers for Mobile handsets

Job 3

Duration: Aug, 1989 – April, 2001. Centre for Advanced Technology,
                Department of Atomic Energy, Indore

Details: Worked as a RF Design and Development Engineer for RF Systems for 2 Gev particle
             accelerator machine. Designed and developed 120 kW CW Amplifier at 189.6 MHz.

Job 4

Duration: Aug, 1988 – Aug, 1989. Bhabha Atomic Research Centre, Department
                of Atomic Energy, Bombay

Details: Worked as a Scientific officer (trainee) and did one year course in Nuclear
             Engineering. Secured second rank in course.

TECHNICAL EXPERTISE (In order of relevance and chronology)

A. Product development experience and responsibilities in current job (July 2002- till now)

  1. Product released including development (10 products)

    1.1 Discrete high power LDMOS transistors for GSM, EDGE, WCDMA applications
          (0.8 GHz to 1GHz band) (6 products)

    1.2 1 hand set multi layer PA for GSM and DCS/PCS bands (1 product)

    1.3 Very high power (120 KW CW) tetrode based PA for RF particle accelerator
          (3 products)
  2. Other Product development involvements (5 products)

    2.1 Characterization of Gen 4 LDMOS technology for 1 GHz application

    2.2 Development of loadpull methodology and fixtures for 1 GHz applications

    2.3 WCDMA integrated Doherty

    2.4 WiMAX integrated Doherty

    2.5 High gain multistage discrete device

    2.6 Plastic moulded package device development

    2.7 Private Mobile Radios (PMR)

  3. Responsibilities during above product developments:

    3.1. Design, development and introduction of Power Amplifier Devices (Discrete High
           Power RF Transistors and MMICs for the wireless infrastructure and Broadcast
           markets.)

    3.2. Design responsibility involves low impedance transistor matching networks for
           Transistors and MMICs with the use of low loss integrated passives, wire bonds,
           MOSCAPs, packaging interfaces and PCB board level matching.

    3.3. My responsibilities also include use of a combination of measurement based
           techniques (e.g. loadpull) and CAD software with the use of linear and non-linear
           models for device design. In The design process, I make use of Agilent’s ADS, planar
           electromagnetic simulation tools (Sonnet's Em and/or Agilent's Momentum) for Device
           pre-match networks design

    3.4. Responsibility to prepare assembly drawing and assembly orders for discrete devices
           and MMICs

    3.5. Layout design in Cadence (virtuoso) for MMIC and Hybrids

    3.6. Doing Measurement of Small signal S parameters, Large signal measurements

    3.7. Load pull characterization of the device

    3.8. Design Load pull fixtures for High power devices

    3.9. Generation of RF Methodologies. Developed successfully the method for load pulling
           very low impedances of high power devices

    3.10. Design and prepare Layout of Test circuits for Production

    3.11. Assemble and Testing of the circuits and qualify the devices for production.
             Responsibilities include board level tuning and optimization of matching networks.

    3.12. To understand circuit instabilities and solve them. Develop solid understanding and
             strategies to resolve them.

    3.13. Commanding and maintaining an engineering test setup for design validation and
             characterization using Microwave measurements techniques (S-parameters
             measurement setup, load pull setups, VNA and calibration techniques, spectrum
             analyzers, power meters, etc).
    3.14. Measurement of Rth (thermal resistance) under infra red set-up

    3.15. Responsibilities include Design of Experiments & data analysis techniques for
             product development.

    3.16. I work closely with device, product, modelling and packaging engineers as well as
             manufacturing personnel for successful and timely product design and introduction.

    3.17. Preparation of tentative Datasheets for the devices

    3.18. Preparation of Documents and Test procedure for production.

    3.19. Job duties include working with systems/architecture team for defining and outlining
             design specs, product engineering for qualification/yield enhancement, and
             applications engineering for addressing/supporting customer activities.

B During tenure in Handset PA Group (April 2001- July 2002)

My main tasks inside this group were

  1. To design and develop MMIC power amplifiers using BJT on LTCC ceramic technology
      Platform.

  2. Layout of impedance matching circuits, control circuit and biasing circuits on LTCC
      multilayer substrates, schematic circuit preparation and simulation of power amplifier
      circuits using ADS. Good knowledge of ADS layout and circuit simulation tools

  3. Electromagnetic Simulation of Passive circuits using Momentum. (Electromagnetic
      simulator from Agilent)

  4. To prepare Measurement set-up and perform measurement and testing of GSM and
      EDGE (3?/8 QPSK modulation) Dual mode Triple band power amplifiers for 21/2
      generation mobile handsets

C Important skills relevant to present job opening (skill developed in above two jobs)

  1. Electronic design & analysis tool

    1.1 RF & Microwave Circuit simulators ADS (Expert level) Microwave Office
          (Good familiarity)

    1.2 Electromagnetic simulator

Momentum in ADS (expert) Sonnet (Good familiarity)

    1.3 Layout Cadence

  2. Highly experience in the use of Focus and Mauri Loadpull setup and related software

  3. Good test and measurement experience and knowledge on modern instruments like
      VNA, Spectrum Analyser, Power Meters, high-speed power supplies etc.

  4. Excellent knowledge of Electromagnetics, RF and Microwave Theory and practice

  5. Experienced in setting up test bench for one tone, two tone, Edge and WCDMA
      measurements

D in other previous jobs, my responsibilities were (Aug 1989 – April 2001)

  1. Complete responsibility of Design, development, fabrication and maintenance of very
      high power tetrode based RF power amplifier system. This System consisted of 120 kW
      CW Amplifier system (3 X 4 Amplifiers) including Air-cooling and water-cooling. 30 kW
      amplifiers chains had 50-dB gain and 4 such units were combined using Hybrid couplers
      and power was fed in High Q cavity

  2. Designed, developed, fabrication of Coaxial line based impedance matching circuit
      (Single sided, transmission line cavities) for above amplifiers (250 W, 1 kW and 30 kW).

  3. Teaching and training of younger colleagues. Conducted courses on S parameters,
      Design and analysis of microwave transistor amplifiers, impedance matching networks,
      Smith chart etc.

  4. Developed a program in Q-Basic for cascaded networks for designing high power
      impedance matching networks using ABCD parameters.

E During Masters Thesis (Aug 1997 –Aug 1999)

  1. Developed and tested algorithm and computer code for full wave (3-Dimensional) FDTD
      electromagnetic simulator for commercial purpose.

  2. In above simulator used Perfectly Matched Layers as Absorbing Boundaries Operators
      and developed code for them and successfully demonstrated reduction in computational
      times and computer resources required for electromagnetic circuits. Used code for
      analysis and design of planar circuits on Full tensor anisotropic substrate.

F In my first job I studied about (Aug 1988 – Aug 1989)

  1. Heavy water pressurised nuclear reactors, fuels, physics and its related electronics and
      instrumentation for one year and stood second in whole training school.

COMPUTER KNOWLEDGE

Programming MathCAD, C, FORTRAN 95 and MATLAB

Operating systems MS-DOS, Windows and UNIX

Programs Word, Excel

TRAINING COURSES

During my work in Philips Nijmegen I have attended the following courses:
- Advanced Wireless and Microwave techniques and systems by Besser Associates
- Wireless measurement by Besser Associates
- Advanced Design System (ADS) Fundamentals by Agilent instructor
- Advanced course on Momentum by Agilent instructor
- One day course on Sonnet
- Dutch language

REPORTS & PUBLICATIONS

Master’s Thesis:

Development of 3-D EM simulator for designing microwave circuits using Material independent perfectly matched layers as ABC

Work Reports:

1. Accuracy prediction of loadpull fixtures using inexpensive load resistors ( PP presentation )

MST base station colloquium presentation January 2003.

2. Design of highly accurate universal loadpull fixture probes for accurate measurement in sub-one Ohm measurements ( PP presentation )

Philips internal project report for loadpull system improvement.

3. Investigation on hybrid design for integrated doherty Philips internal project report for integrated doherty project ,September 2005
4. Simulation and verification of Square loop inshin for High gain devices
Philips internal project report for high gain final project, September 2005
5. Development plan for wide band high impedance devices for 800MHz-1GHz Band
Philips internal project report for wide band, high impedance and stable devices for 1 GHz band, January 2006
6. Integrated Doherty for WiMAX application in 2.5 GHz to 2.7 GHz Band NXP Semiconductors internal project report, September 2006

7. Feasibility study of GEN6 die for low voltage and low frequency applications NXP Semiconductors internal project report, November 2006

8. Class-F amplifier in the standard package Philips internal project report for in package class F amplifier

9. Development of BLF6G10 – 45 transistor for WCDMA NXP Semiconductors internal project report, May 2006

10. Development of BLC6G10 – 160 transistor for WCDMA NXP Semiconductors internal
     project report, July 2006

11. Development of BLC6G10 – 200 transistor for WCDMA NXP Semiconductors internal project report, March 2006

STUDIES (Technical Education)

Degree: Masters of Technology

Subject: Electrical Engineering

College: Indian Institute of Technology, Kanpur

Specialisation: Electromagnetic & Microwave Engineering

Years: Two Years course (July,1997-Aug,1999)

Marks Obtained: CPI 8.6/10

Details of courses taken:

(Only those relevant to RF Engineering)

Microwave Measurements and Design

Microwave Circuits

Antenna Analysis and Synthesis

Computational Electromagnetics

Advanced Engineering Electromagnetics

Fiber Optic Systems I

Fiber Optic Systems II

Degree: Bachelor of Engineering

Subject: Electronics and communication

College: M. B. M. Engineering College, University of Jodhpur, Jodhpur
Years: Four year course (July, 1983-March,1988)

Marks Obtained: 67%

Details of courses taken: (Only those relevant to RF Engineering)

Electronic Materials and Component & Processing,

Communication Engineering,

Transmitting and Radiating System

High Frequency Electronics

Radio Communication

Electronic Measurements

Television Engineering

Microwave Engineering

Digital and Analog Communication Systems

Radar Systems and Navigational Aids

Industrial Electronics and controls

LINGUISTIC ABILITIES

English Excellent as good as mother tongue

Hindi Mother Tongue
Dutch Niveau 4 (Level 4 sufficient for Higher Studies)

REFERENCES

From Work:

1. Previous Boss for 4 years

Jasper Verduyn

Technical Program Manager

Philips Medical Systems

MR Hardware Development

Veenpluis 4-6

Building QR 2153

5680 DA Best

The Netherlands

Tel: +31 40 2762291 or +31 6 10424235

E-mail: Jasper.Verduyn@philips.com

2. Previous Boss for 3 years

Dr.Ir. Marco Koelink

Director / Head of Materials Analysis

MiPlaza

Philips Research Europe

High Tech Campus 12 (Room 030)

5656 AE Eindhoven, The Netherlands

Tel: +31 40 27 47676, Fax: +31 40 27 43075

E-mail: Marco.Koelink@Philips.com

http://www.miplaza.com

3. Colleague

John Gajadharsing

R49 RF MSI R&D Concept

BZ2.034

Gerstweg 2

6534 AE

Nijmegen

The Netherlands

Tel: +31 24 353 3206

E-mail:

john.gajadharsing@NXP.com

4 From University:

Dr. Animesh Biswas, ACES building,

Dept. of Electrical Engineering, IIT Kanpur (U.P.) -208 016

E-mail: abiswas@iitk.ernet.in

I hereby declare that the facts submitted by me are true

Amitabh Chowdhary