Empower RF Systems X−Band 1 kW SSPA |
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February 7, 2023 - Inglewood, CA - Empower RF announces delivery of the model 2241, a GaN Solid State PA pulse emitter designed for new Radar applications where portability and extended range are key requirements. Across the operating band of 9 to 10 GHz, the model 2241 provides over 1000 W peak power in a compact 3U chassis. Flexible waveform handling is a key feature. The 2241 is capable of long pulses, high duty cycles, and a derated long pulse mode. The unit is controlled through the front panel touch screen, M2M SCPI, and peer/Lan connected PC and web browser with no software to install. Production Test Data Available upon request.
The amplifier includes a built-in control and monitoring system, with protection functions which preserve high availability. Remote management and diagnostics are via an embedded web server allowing network managed site status and control simply by connecting the unit’s Ethernet port to a LAN. Using a web browser and the unit’s IP address (IPV4) allows ease of access with the benefit of multi-level security. The control system core runs an embedded OS (Linux), has a built-in non-volatile memory for event recording, and factory setup recovery features. The extended memory option allows storage of control parameters and event logs. Learn More About This Product: www.empowerrf.com/datasheet/Empower_RF_Amplifier_2236.pdf Complete Empower RF Amplifiers lineup: www.empowerrf.com/products/rf_power_amplifier.php About Empower RF Empower RF Systems is the technology leader in RF and Microwave power amplifier solutions for defense, commercial, and industrial applications. Our products incorporate the latest semiconductor and power combining technologies and originate from an extensive library of "building block" designs. Solutions range from basic PA modules to multifunction PA assemblies with embedded, microprocessor controllers. Contact: Empower RF Systems, Inc.
Posted May 3, 2023 |
The 2241 is suitable for pulse applications
in the X-band frequency. This amplifier utilizes high power GaN on SiC devices that
provide wide frequency response, high gain, high peak power capability, and low
distortions. Exceptional performance, long-term reliability and high efficiency
are achieved by employing advanced broadband RF matching networks and combining
techniques, EMI/RFI filters, and all qualified components. The amplifier is constructed
within one single 3RU drawer including the forced air-cooling. Available operating
voltage configurations are single phase 100-240 VAC up to 400Hz and 28 VDC.