BeRex Intros Low Noise Discrete FET for Wireless Applications

BCL016B-343, a discrete ultra-low noise GaAs PHEMT in a SOT-343 package for applications from DC to 8GHz.

Santa Clara, CA.  July 1, 2015  BeRex, a leading provider of high performance GaAs pHEMT (pseudomorphic high electron mobility transistor) products, today announces the immediate availability of the BCL016B-343, a discrete ultra-low noise GaAs pHEMT, in an industry standard SOT-343 SMT package, for L through C band applications (DC to 8,000 MHz). It is ideal for use in highly noise sensitive designs such as front-end amplifiers for Wi-Fi, WLAN, GPS and radar up to 8 GHz in frequency.

Operating at just 2 V (5 V maximum) the BCL016B-343 provides a remarkably low Noise Figure (NF) of 0.2 dB with a high Associated Gain of 18 dB and a flat OIP3 of 21 dBm at 2.4 GHz. At 5.8 GHz the NF is still only 0.4 dB with an Associated Gain of 13 dB. In addition, the robust Power In rating (Pin) of up to 20 dBm allows the BCL016B-343 to be used flexibly in one or more stages of a low noise amplifier.

"The BCL016B-343 represents a new product direction for BeRex, Inc. By leveraging our experience providing PHEMTs and MESFET devices for some of the world's most demanding commercial and military applications, we are now also able to bring to market products targeting high-volume, cost-sensitive applications that still reflect our commitment to quality, reliability and performance." says Dr. Alex Yoo, Vice President of Research and Development at BeRex, Inc.

The BeRex BCL016B-343 is competitively priced. It is in production and samples are available upon request. Additional information about these and other BeRex products is available on the company website:  www.berex.com.

BeRex, Inc., founded in 2007 and headquartered in Santa Clara, CA, designs, manufactures, and markets a broad range of RF GaAs MIMIC devices as well as a full line of PHEMT and MESFET discrete transistor products for commercial and military clients worldwide.

 

About BeRex

BeRex, Inc., founded in 2007 and headquartered in Santa Clara, CA, designs, manufactures, and markets a broad range of RF GaAs MIMIC devices as well as a full line of PHEMT and MESFET discrete transistor products for commercial and military clients worldwide.

Contact:

David Snook
Marketing & Sales
3350 Scott Blvd.
Suite 61-01
Santa Clara, CA 95054
dsnook@berex.com
(408) 452-5595
www.berex.com

 

 

Posted July 3, 2015