NMIC Ships 10,000th Aluminum Diamond Heat Spreader for GaN Devices
-- Orders accelerate as customers validate product’s ability to
reduce device junction temperature by 25% and meet cost
decreasing system weight.
TUCSON, AZ (February 6, 2012) -- Nano Materials
International Corp. (NMIC) today announced that it has shipped its 10,000th aluminum diamond
metal matrix composite (MMC) heat spreader for use in gallium nitride (GaN) RF power transistors
and Monolithic Microwave Integrated Circuits (MMICs). The achievement is a significant milestone
for acceptance of NMIC’s aluminum diamond MMCs and for manufacturers of defense and commercial
RF power amplifiers who must dissipate the heat generated by high-power-density GaN devices.
Orders for NMIC’s aluminum diamond MMCs have continuously increased as tests by GaN device,
power amplifier, and system manufacturers have validated the benefits of the technology and
as NMIC has optimized its processes so that it adds minimally to the cost of each device.
MMCs are the result of more than a decade of research and development dedicated to producing
a material that helps GaN device manufacturers dissipate the heat from their products. Rapidly
removing heat is essential for GaN devices to deliver their rated RF output power, as the inability
to do so requires them to be “backed-off” to lower power levels.
NMIC’s MMCs have demonstrated
their ability to reduce device junction temperature by about 25% beyond what can be realized
using conventional heat spreader materials or material combinations. They exploit the inherent
thermal conductivity of industrial-grade diamond, which at greater than 1200 W/mK is higher
than any substance on Earth. NMIC’s patented process combines diamond and aluminum particles
to form an MMC with thermal conductivity greater than 500 W/mK, more than twice that of its
nearest competitor. The MMCs are also up to 10 times lighter than conventional heat spreader
materials such as copper-tungsten and copper-molybdenum.
is especially appealing in applications such as Active Electronically-Steered Array (ASEA) radars,
in which hundreds or thousands of GaN MMICs are used, as pounds can be shaved from the overall
system. In addition, the MMICs are extremely strong, stable during temperature cycling, and
have a coefficient of expansion that matches silicon carbide (SiC), the most common transistor
substrate compound used by GaN device manufacturers.
About NMICNano Materials
NMICNano Materials International Corp, headquartered in Tucson,
AZ, is dedicated to the development and commercialization of products based on aluminum diamond
metal matrix composites (MMCs) that offer the best properties for removing the heat generated
by microwave power transistors and laser diodes, and to development of transparent ceramics
(Spinel) for ballistic windows and other applications. The company operates in a 42,000 sq.
ft. facility that incorporates production, scale-up, application development, and technical
More information about NMIC aluminum diamond MMCs
can be obtained from the company’s Web site,
by calling (520) 574-1980.