Hittite's New GaN MMIC Power Amplifiers Deliver up to 25 W
-- Ideal for General Communications, Test Instrumentation
& Radar Applications from 2 to 20 GHz
Chelmsford, MA, 07/11/2013 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, announced four new Gallium Nitride (GaN) MMIC power amplifier products which offer significant performance, size and durability advantages for communications, test instrumentation and radar systems operating in the 2 to 20 GHz frequency range.
The HMC1086F10 is a 25 W GaN MMIC Power Amplifier which operates between 2 and 6 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 23 dB of small signal gain, +44 dBm saturated output power, and delivers +46 dBm output IP3 at +33 dBm output power per tone. The amplifier draws 1100 mA quiescent current from a +28 V DC supply. The HMC1086 is the die version of the HMC1086F10. This 25 W GaN MMIC power amplifier also operates between 2 and 6 GHz and provides 22 dB of small signal gain, +44 dBm of saturated output power, and +48 dBm output IP3 at +33 dBm output power per tone. Both amplifiers feature RF I/Os that are DC blocked and matched to 50 Ohms for ease of use.
The HMC1087F10 is an 8 W GaN MMIC Power Amplifier which operates between 2 and 20 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 11 dB of small signal gain, +39 dBm of saturated output power, and +43 dBm output IP3 at +28 dBm output power per tone. The amplifier draws 850 mA quiescent current from a +28V DC supply. The HMC1087 is the die version of the HMC1087F10. This 8 W GaN MMIC power amplifier also operates between 2 and 20 GHz and provides 11 dB of small signal gain, +39 dBm of saturated output power, and +45 dBm output IP3 at +29 dBm output power per tone. Both amplifiers feature RF I/Os that are matched to 50 Ohms.
Both the HMC1086 and the HMC1087 amplifiers feature compact die sizes, high output power capability and simplified biasing, which make them ideal for integration into high power density Multi-Chip-Module (MCM) and subsystem applications.
All four GaN MMIC power amplifiers complement Hittite’s extensive line of microwave power amplifiers which provide continuous frequency coverage from 0.01 to 86 GHz. For inquiries and pricing information, please contact HMCSales@hittite.com. Datasheets can be requested on-line at email@example.com.
Hittite Microwave Corporation is an innovative designer and manufacturer of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. The Company offers over 1075 standard products across 36 product lines in addition to a wide range of custom products which apply analog, digital and mixed-signal semiconductor technologies, which are used in a wide variety of wireless / wired communication and sensor applications for Automotive, Broadband, Cellular Infrastructure, Fiber Optics & Networking, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets. The Company is headquartered in Chelmsford, Massachusetts.
Marketing Communications Manager
Hittite Microwave Corporation
2 Elizabeth Dr.
Chelmsford, MA 01824
978-250-3343, ext. 1117
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