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Hittite's New GaN MMIC Power Amplifiers Deliver up to 25 W
-- Ideal for General Communications, Test Instrumentation
Applications from 2 to 20 GHz
Chelmsford, MA, 07/11/2013 – Hittite Microwave
Corporation, the world class supplier of complete MMIC based solutions for communication &
military markets, announced four new Gallium Nitride (GaN) MMIC power amplifier products which
offer significant performance, size and durability advantages for communications, test instrumentation
and radar systems operating in the 2 to 20 GHz frequency range.
is a 25 W GaN MMIC Power Amplifier which operates between 2 and 6 GHz, and is provided
in a 10-lead flange mount package. The amplifier typically provides 23 dB of small signal
gain, +44 dBm saturated output power, and delivers +46 dBm output IP3 at +33 dBm
output power per tone. The amplifier draws 1100 mA quiescent current from a +28 V
DC supply. The
is the die version of the
This 25 W GaN MMIC power amplifier also operates between 2 and 6 GHz and provides
22 dB of small signal gain, +44 dBm of saturated output power, and +48 dBm output
IP3 at +33 dBm output power per tone. Both amplifiers feature RF I/Os that are DC blocked
and matched to 50 Ohms for ease of use.
is an 8 W GaN MMIC Power Amplifier which operates between 2 and 20 GHz, and is provided
in a 10-lead flange mount package. The amplifier typically provides 11 dB of small signal gain,
+39 dBm of saturated output power, and +43 dBm output IP3 at +28 dBm output power
per tone. The amplifier draws 850 mA quiescent current from a +28V DC supply. The
is the die version of the
This 8 W GaN MMIC power amplifier also operates between 2 and 20 GHz and provides
11 dB of small signal gain, +39 dBm of saturated output power, and +45 dBm output
IP3 at +29 dBm output power per tone. Both amplifiers feature RF I/Os that are matched
to 50 Ohms.
and the HMC1087
amplifiers feature compact die sizes, high output power capability and simplified biasing, which
make them ideal for integration into high power density Multi-Chip-Module (MCM) and subsystem
All four GaN MMIC power amplifiers complement Hittite’s extensive line
of microwave power amplifiers which provide continuous frequency coverage from 0.01 to 86 GHz.
For inquiries and pricing information, please contact
Datasheets can be requested on-line at
Hittite Microwave Corporation is an innovative designer and manufacturer
of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for
technically demanding digital, RF, microwave and millimeterwave applications covering DC to
110 GHz. The Company offers over 1075 standard products across 36 product lines in addition
to a wide range of custom products which apply analog, digital and mixed-signal semiconductor
technologies, which are used in a wide variety of wireless / wired communication and sensor
applications for Automotive, Broadband, Cellular Infrastructure, Fiber Optics & Networking,
Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.
The Company is headquartered in Chelmsford, Massachusetts.
Marketing Communications Manager
Hittite Microwave Corporation
2 Elizabeth Dr.
978-250-3343, ext. 1117