Richardson RFPD Introduces Pair of InGaP HBT Amplifiers from Freescale
-- High Efficiency/Linearity Devices Ideally Suited for Small Cell Applications
May 11, 2012 – LaFox, Illinois: Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. The two linear power amplifiers are the latest additions to Freescale's extensive range of GaAs MMICs optimized for wireless infrastructure applications. Designed to streamline development for today's demanding 3G and 4G networks, the amplifiers are ideally suited for small cell applications, including Femtocell and Picocell, as well as macro cell base stations, tower mount amplifiers (TMA), remote radio heads (RRH) and repeaters. Both devices are housed in cost-effective, surface mount QFN plastic packages.
The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier that is suitable for applications with frequencies from 400 to 1000 MHz such as code division multiple access (CDMA), global system for mobile communications (GSM), long term evolution (LTE) and ZigBee® with 3 to 5 Volt supply.
Key features of the MMZ09312B include:
Key features of the MMZ25332B include:
About Richardson RFPD, Inc.:
Richardson RFPD, Inc., an Arrow Electronics company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. Relationships with the industry’s top component suppliers enable Richardson RFPD to meet the total engineering needs of each customer. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide support for all aspects of customers’ go-to-market strategy, from prototype to production. More information is available online at www.richardsonrfpd.com.
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For details, contact:
Director, Strategic Product Marketing
Phone: (630) 208-2700
40W267 Keslinger Road
P.O. Box 307
LaFox, Illinois 60147-0307
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