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Richardson RFPD Introduces New GaN on SiC Power Transistor Devices
from M/A-COM Tech

April 11, 2012 Press Release

Richardson RFPD logo

--  Eight Devices Represent Decades of Leadership in Power Hybrid Technology
MAGX-000912-125L00 and MAGX-000912-250L00April 11, 2012 – La Fox, Illinois: Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for eight devices representing the new gallium nitride (GaN) on Silicon Carbide (SiC) family of power transistors from M/A-COM Technology Solutions, Inc. This product family targets L- and S-Band applications from 960 to 3500 MHz and reinforces M/A-COM Tech's rich heritage of leadership in power hybrid technology.
These high performance GaN on SiC transistors offer rugged 50V operation with greater than 175W breakdown voltage, for reliable and stable operation in extreme mismatched load conditions. The devices are offered in thermally-enhanced Cu/Mo/Cu flanged ceramic packages, and are EAR99-compliant.
Features of the MAGX-000912-125L00 and MAGX-000912-250L00 include:
·         969-1215 MHz Frequency Range
·         GaN on SiC HEMT 125- and 250-Watt Pulsed Power Transistors
·         Internally Matched
·         Common Source Configuration
·         Excellent Power Added Efficiency: 60%
·         Developed for Avionics Applications, Including *Mode-S, TCAS, JTIDS, DME and TACAN
Features of the MAGX-001214-125L00 and MAGX-001214-250L00 include:
·         1200-1400 MHz Frequency Range
·         GaN on SiC HEMT 125- and 250-Watt Pulsed Power Transistors
·         Unparalleled Operation Even in Extreme Mismatch Load Conditions
·         Developed for L-Band Radar Applications
Features of the MAGX-001220-100L00 include:
·         1200-2000 MHz Frequency Range
·         GaN on SiC HEMT 100-Watt Power Transistor
·         High Gain, Efficiency and Superior Ruggedness Over a Wide Bandwidth
·         Drain Efficiency: 55%
·         Will Withstand 10:1 Load Mismatches
Features of the MAGX-002731-030L00 and MAGX-002731-100L00 include:
·         2700-3100 MHz Frequency Range
·         GaN on SiC HEMT 30- and 100-Watt Pulsed Power Transistors
·         Superior Performance with Extreme Ruggedness
·         Excellent Breakdown Performance: Up to 175 Volts
·         Developed for Civilian and Military Pulsed Radar Applications
All released products are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the M/A-COM Tech GaN on SiC Power Transistors webpage at http://www.richardsonrfpd.com/Pages/Search-Results.aspx?focuscd=MW. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn more about additional products from M/A-COM Tech, please visit the M/A-COM Tech storefront on the Richardson RFPD website.

About Richardson RFPD, Inc.:
Richardson RFPD, Inc., an Arrow Electronics company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. Relationships with the industry’s top component suppliers enable Richardson RFPD to meet the total engineering needs of each customer. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide support for all aspects of customers’ go-to-market strategy, from prototype to production.  More information is available online at www.richardsonrfpd.com.

Follow Richardson RFPD on Twitter at www.twitter.com/Richardson_RFPD.
To subscribe to Richardson RFPD’s New Products e-newsletter, visit: www.richardsonrfpd.com/subscribe

For details, contact:
Mark Vitellaro
Director, Strategic Product Marketing
E-mail: mvitellaro@richardsonrfpd.com
Phone: (630) 208-2700
40W267 Keslinger Road
P.O. Box 307
LaFox, Illinois 60147-0307

Posted  4/12/2012

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