RFMW Introduces 30W GaN Transistor from TriQuint Semiconductors
June 7, 2012 Press Release
RFMW , Ltd. announces design and sales support for TriQuint Semiconductor’s new 30W GaN transistor with broadband frequency coverage of DC to 6GHz. Available in an earless, ceramic package, the T1G6003028-FS provides 11dB typical gain, over twice the gain of competing products, allowing a lower power driver and the associated cost savings. The T1G6003028-FS offers >46% efficiency at 5.6GHz running off a 28V supply. Power, gain and efficiency can be optimized with simple external matching networks. Applications include military radar and communications, civilian radar, jammers and general purpose “green” RF drivers and final stage amplifiers. Evaluation boards are available for qualified applications.
Details on the T1G6003028-FS can be found here: http://www.rfmw.com/ProductDetail/T1G6003028FS-TriQuint-Semiconductor-Inc/431413/
For more information please contact:
Stocking Distributor RFMW, Ltd.
90 Great Oaks Blvd. #107
San Jose, Ca. 95119
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