RFMD Unveils 2nd Generation Ultra-High Efficiency PAs
February 27, 2012 Press Release
Barcelona, Spain, February, 27, 2012 – RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of its ultra-high efficiency power amplifier (PA) product portfolio to include six 4G LTE PAs. The new PAs deliver superior peak efficiency and current consumption in LTE mode and complement RFMD’s first-generation family of ultra-high efficiency PAs for WCDMA applications.
With the addition of the six new LTE PAs, RFMD’s ultra-high efficiency product family now covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 4, 7, 11, 13, 17, 18, 20, and 21 – helping to accelerate the global reach of LTE in mobile devices and significantly enhancing the mobile broadband consumer experience related to data throughput, battery life, and thermal performance.
RFMD’s ultra-high efficiency PAs reset the bar for performance in smartphones and other high-performance data-centric connected devices. The PAs deliver ultra-high peak efficiency of 42%-44% in LTE mode, significantly above competitive product portfolios. RFMD’s LTE PAs also offer unprecedented linearity at the highest power conditions, enabling bandwidths up to 20MHz and resulting in higher data transfers.
In both 3G and 4G LTE, RFMD’s ultra-high efficiency PAs leverage the Company’s leadership in RF systems expertise and RF power management to deliver best-in-class current consumption across all power levels and in all modes and bands. RFMD’s leadership in power management is expected to be increasingly critical in calendar 2012, as leading cellular solutions begin to adopt advanced power management schemes, such as average power tracking (APT) and envelope tracking (ET).
Eric Creviston, president of RFMD’s Cellular Products Group (CPG), said, “As RFMD’s customers continue to push the limits on band count and form factor, this is creating an unprecedented opportunity for RFMD to solve the increasingly complex RF challenges related to battery life and thermal performance. We expect strong growth and market share gains in 3G and 4G LTE as our ultra-high efficiency product portfolio continues to expand.”
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties, including variability in operating results, risks associated with the impact of global macroeconomic and credit conditions on our business and the business of our suppliers and customers, our reliance on a few large customers for a substantial portion of our revenue, the rate of growth and development of wireless markets, our ability to bring new products to market, our reliance on inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy, assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired companies, including the risk that we may not realize expected synergies from our business combinations, our ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw material costs and availability, our ability to reduce costs and improve margins in response to declining average selling prices, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, dependence on gallium arsenide (GaAs) for the majority of our products, dependence on third parties, and substantial reliance on international sales and operations. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and statements filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.
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VP, Investor Relations
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