RFMD® Expands GaN Matched Power Transistor Family
Targeting Pulsed-Radar Applications
June 18, 2012 Product Announcement
Sr. Manager, Communications
Montreal, Canada, June 18, 2012 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and
manufacture of high-performance radio frequency components and compound semiconductor technologies, today
announced the release of the
RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The
delivers superior performance versus competing silicon power technologies.
complements the recently released 380-watt RF3928B, the highest output power S-Band device in RFMD’s matched power
transistor family. RFMD is expanding its portfolio of GaN-based power amplifier transistor products across bands,
increasing its leadership position in the radar market.
RFMD's GaN matched power transistors extend range, reduce size and weight, and improve overall ruggedness in
new and existing radar architectures. The
operates over a broad frequency range (0.96-1.2GHz) and delivers 280-watt pulsed power, high gain >14dB, and high
peak efficiency of >55%. Additionally, the
incorporates internal matching to simplify and shrink designers’ circuits. Packaged in a hermetic, flanged ceramic
leverages RFMD's advanced heat sink and power dissipation technologies, delivering excellent thermal stability and
conductivity. RFMD’s RF393x unmatched power transistors (UPT) can be used as drivers to the
Jeff Shealy, general manager of RFMD's Power Broadband Business Unit, said, "RFMD is pleased to expand our
GaN-based product portfolio, offering industry-leading power performance in support of diverse end markets. RFMD's
GaN product portfolio demonstrates our commitment to technology and product leadership, and we look forward to
introducing additional GaN devices in the near term that feature superior power density, high power efficiency,
and rugged dependability."
RFMD is exhibiting its GaN power portfolio at the IEEE International Microwave Symposium through June 22, in
Booth 1210 at the Palais des congress, in Montreal, Canada.
Samples and production quantities are available now through RFMD’s online store
or through local RFMD sales channels.
Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance radio
frequency components and compound semiconductor technologies. RFMD’s products enable worldwide mobility, provide
enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure,
wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its
diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the
world's leading mobile device, customer premises and communications equipment providers.
Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design,
sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more
information, please visit RFMD's web site at
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VP, Investor Relations
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