Montreal, Canada, June 18, 2012 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and
manufacture of high-performance radio frequency components and compound semiconductor technologies, today
announced the release of the
RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The
delivers superior performance versus competing silicon power technologies.
complements the recently released 380-watt RF3928B, the highest output power S-Band device in RFMD’s matched power
transistor family. RFMD is expanding its portfolio of GaN-based power amplifier transistor products across bands,
increasing its leadership position in the radar market.
RFMD's GaN matched power transistors extend range, reduce size and weight, and improve overall ruggedness in
new and existing radar architectures. The
operates over a broad frequency range (0.96-1.2GHz) and delivers 280-watt pulsed power, high gain >14dB, and high
peak efficiency of >55%. Additionally, the
incorporates internal matching to simplify and shrink designers’ circuits. Packaged in a hermetic, flanged ceramic
leverages RFMD's advanced heat sink and power dissipation technologies, delivering excellent thermal stability and
conductivity. RFMD’s RF393x unmatched power transistors (UPT) can be used as drivers to the
Jeff Shealy, general manager of RFMD's Power Broadband Business Unit, said, "RFMD is pleased to expand our
GaN-based product portfolio, offering industry-leading power performance in support of diverse end markets. RFMD's
GaN product portfolio demonstrates our commitment to technology and product leadership, and we look forward to
introducing additional GaN devices in the near term that feature superior power density, high power efficiency,
and rugged dependability."
RFMD is exhibiting its GaN power portfolio at the IEEE International Microwave Symposium through June 22, in
Booth 1210 at the Palais des congress, in Montreal, Canada.
Availability Samples and production quantities are available now through RFMD’s online store
or through local RFMD sales channels.
About RFMD RF Micro
Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance radio
frequency components and compound semiconductor technologies. RFMD’s products enable worldwide mobility, provide
enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure,
wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its
diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the
world's leading mobile device, customer premises and communications equipment providers.
Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design,
sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more
information, please visit RFMD's web site at
release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private
Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to,
statements about our plans, objectives, representations and contentions and are not historical facts and typically
are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate,"
"believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking
statements are expressed differently. You should be aware that the forward-looking statements included herein
represent management's current judgment and expectations, but our actual results, events and performance could
differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of
these forward-looking statements or publicly announce the results of any revisions to these forward-looking
statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to
numerous risks and uncertainties, including variability in operating results, risks associated with the impact of
global macroeconomic and credit conditions on our business and the business of our suppliers and customers, our
reliance on a few large customers for a substantial portion of our revenue, the rate of growth and development of
wireless markets, our ability to bring new products to market, our reliance on inclusion in third party reference
designs for a portion of our revenue, our ability to manage channel partner and customer relationships, risks
associated with the operation of our wafer fabrication, molecular beam epitaxy, assembly and test and tape and
reel facilities, our ability to complete acquisitions and integrate acquired companies, including the risk that we
may not realize expected synergies from our business combinations, our ability to attract and retain skilled
personnel and develop leaders, variability in production yields, raw material costs and availability, our ability
to reduce costs and improve margins in response to declining average selling prices, our ability to adjust
production capacity in a timely fashion in response to changes in demand for our products, dependence on gallium
arsenide (GaAs) for the majority of our products, dependence on third parties, and substantial reliance on
international sales and operations. These and other risks and uncertainties, which are described in more detail in
RF Micro Devices' most recent Annual Report on Form 10-K and other reports and statements filed with the
Securities and Exchange Commission, could cause actual results and developments to be materially different from
those expressed or implied by any of these forward-looking statements.
RF MICRO DEVICES®, RFMD® and
PowerSmart® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the
property of their respective owners.
At RFMD® Douglas DeLieto
VP, Investor Relations 336-678-5322
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