May 10, 2012 Press Release
-- New Amplifier & Mixer Solutions for Backhaul Radios to 46.5 GHz!
-- Now Offering the Industry’s Widest
Selection of Microwave Radio Solutions
MA, 5/10/2012 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for
communication & military markets, announces the release of two new amplifier and three new mixer products which
are ideal for microwave & millimeterwave radios, military sensors, test & measurement equipment and SatCom
applications from 24 to 46.5 GHz.
is a self-biased GaAs MMIC Low Noise Amplifier (LNA) which operates between 24 and 43.5 GHz and
delivers 23 dB gain, 2.2 dB noise figure and output IP3 up to +22 dBm. This versatile LNA consumes only 70 mA from
a +2.5V supply while the output P1dB rating of +12 dBm enables it to serve as a LO driver for many of Hittite’s
balanced, I/Q and image reject mixers. The
features I/Os that are DC blocked and internally matched to 50 Ohms, and is ideal for high
capacity microwave radios and VSAT applications. The
is housed in a compact 3 x 3 mm QFN plastic package.
is a four stage GaAs PHEMT MMIC Medium Power Amplifier die which operates between 34 and 46.5 GHz.
This powerful amplifier provides 22 dB of gain, +26 dBm of saturated output power, and 17% PAE from a +6V supply.
With output IP3 as high as +37 dBm, the
is an ideal solution for high linearity applications in point-to-point radio, military and space. This
compact wideband driver amplifier occupies less than 2 mm2.
are compact I/Q MMIC mixers which cover RF frequencies from 17 to 27 GHz and from 15 to 33.5 GHz respectively.
Each mixer utilizes two double balanced mixer cells and a 90 degree hybrid, and is fabricated in a GaAs MESFET
process. These highly integrated converters can be used as either image reject mixers or as single sideband
upconverters with conversion losses as low as 9 dB. The
are housed in footprint compatible 4 x 4 mm QFN packages and require no external components.
is a special purpose triple balanced mixer which accepts 16 to 22 GHz at the IF port and 26 to 32
GHz at the RF port. The
exhibits excellent LO/RF, LO/IF and 2 LO/IF isolation due to optimized balun structures, and
requires no external components. The
operates with LO drive levels as low as +9 dBm from 7 to 11 GHz, and is ideal for upconversion and
downconversion in satellite transponder applications. The
is housed in a compact 3 x 3 mm QFN package and requires no external matching components.
These new products complement the widest selection of microwave and millimeterwave communication solutions
available from any OEM. Samples and evaluation PC boards for all SMT packaged products are available from stock
and can be ordered via the company's e-commerce site or via direct purchase order. Released data sheets are
available on-line at www.hittite.com
. Hittite Microwave Corporation is an innovative designer and manufacturer of
high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding
digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. The Company's standard and custom
products apply analog, digital and mixed-signal semiconductor technologies, which are used in a wide variety of
wireless / wired communication and sensor applications for Automotive, Broadband, Cellular Infrastructure, Fiber
Optics & Networking, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.
The Company is headquartered in Chelmsford, Massachusetts. Contact
Mararketing Communications Manager
Hittite Microwave Corporation
2 Elizabeth Dr.
Chelmsford, MA 01824
978-250-3343, ext. 1117
978-250-3373 FaxPosted 5/11/2012