•−•  ••−•    −•−•  •−  ••−•  •
RF Cafe Morse Code >Hear It<

Job Board

About RF Cafe™


RF Cafe Software

RF Cascade Worbook
 RF Cascade Workbook 2005 - RF Cafe
Calculator Workbook
RF Workbench
Smith Chart™ for Visio
Smith Chart™ for Excel
RF & EE Symbols Word
RF Stencils for Visio

Your RF Cafe
Progenitor & Webmaster

Click here to read about RF CafeKirt Blattenberger

Carpe Diem!
(Seize the Day!)

5th MOB:
My USAF radar shop

Airplanes and Rockets:
My personal hobby website

Equine Kingdom:
My daughter Sally's horse riding website

RFMD Intros High-Power GaN HEMT Power Amplifiers

RFMD logoNovember 12, 2012
Product Announcement

Irma Swain
Sr. Manager, Communications

RFHA1042RFMD’s new RFHA104x series of high-power GaN broadband power transistors (BPTs) are optimized for military communications, commercial wireless infrastructure, and general purpose applications. Using an advanced 65 V high power density GaN semiconductor process optimized for high peak-to-average ratio applications, these high-performance amplifiers achieve high power with high efficiency and flat gain over a broad frequency range in a single amplifier design. Each is an input-matched GaN transistor packaged in an air cavity ceramic package providing excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized, matching networks external to the package that provide wideband gain and high efficiency, all in a single amplifier ideal for linear correction circuits.

  • Peak power: 125W (RFHA1042), 150W (RFHA1043)
  • Single circuit for frequency: 225MHz to 450MHz (RFHA1042), 1.2GHz to 1.85GHz (RFHA1043)
  • 48V modulated performance:
    • POUT: 45.2dBm
    • Gain: 18.5dB (RFHA1042), 15.5dB (RFHA1043)
    • Drain Efficiency: 42% (RFHA1042), 30% (RFHA1043)
    • ACP: -26dBc (RFHA1042), -30dBc (RFHA1043)
  • 48V CW broadband performance
    • POUT: 51.4dBm (RFHA1042), 52dBm (RFHA1043)
    • Gain: 16dB (RFHA1042), 13.5dB (RFHA1043)
    • Drain Efficiency: 60% (RFHA1042), 51% (RFHA1043)
  • Optimized for video bandwidth and minimized memory effects
  • Large signal models available
  • These products are currently available in production quantities.
For more information on RFHA1042, visit

For more information on RFHA1043, visit

About RFMD
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com

RF MICRO DEVICES®, RFMD® and PowerSmart® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.
Douglas DeLieto
VP, Investor Relations

This message was distributed by
Techwire International

Posted  11/12/2012

Try Using SEARCH to Find What You Need.  >10,000 Pages Indexed on RF Cafe !

Copyright 1996 - 2016
Webmaster:  Kirt Blattenberger, BSEE - KB3UON
Family Websites:  Airplanes and Rockets | Equine Kingdom

All trademarks, copyrights, patents, and other rights of ownership to images
and text used on the RF Cafe website are hereby acknowledged.