August 21, 2012 Press Release
-- Lower Priced Hermetically Sealed Connectorized Amplifiers
Operate to 36 GHz!
Chelmsford, MA 9/10/2012 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions
for communication & military markets, has recently reduced the list price of several of our pHEMT Low Noise and
Power Amplifier modules. These rugged connectorized amplifiers are ideal for high performance applications in microwave
radio, military & space, radar systems, test instrumentation and synthesizer applications from 1 to 36 GHz.
are GaAs pHEMT
Low Noise Amplifier modules which are rated from 1 to 12 GHz and 29 to 36 GHz, respectively. These high performance
amplifier modules exhibit noise figures as low as 1.8 dB, with up to 20 dB of gain and up to +30 dBm output IP3. The
LNA module features
integrated voltage regulators and consumes 60 mA from a +6V supply, while the
operates directly from
a single +3V supply and consumes only 80 mA.
are GaAs pHEMT Power
Amplifier modules which are rated from 17 to 24 GHz and 21 to 31 GHz, respectively. These powerful amplifier modules
deliver up to +24 dBm output P1dB, up to +30 dBm output IP3, and up to 22 dB of gain. The
is a Wideband High
Gain GaAs pHEMT Driver Amplifier module which is rated from 2 to 20 GHz and provides up to 31 dB gain and +24 dBm
output P1dB, with noise figure as low as 2.5 dB. The
voltage regulators which allow for flexible biasing of both the negative and positive supply pins, while internal
bias sequencing circuitry assures robust operation.
Each of these lower cost hermetically sealed modules feature
internally matched and internally DC blocked RF I/Os, making them ideal for both engineering laboratory and production
screening test environments. The
offer a unique combination
of performance, ruggedness and cost, and represent an outstanding value when compared to competing solutions.
All connectorized module products are available from stock and can be ordered via the company's e-commerce site
or via direct purchase order. Released data sheets may be found at
. About Hittite Microwave
Hittite Microwave Corporation is an innovative designer and manufacturer of high performance integrated circuits,
or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimeterwave
applications covering DC to 110 GHz. The Company's standard and custom products apply analog, digital and mixed-signal
semiconductor technologies, which are used in a wide variety of wireless / wired communication and sensor applications
for Automotive, Broadband, Cellular Infrastructure, Fiber Optics & Networking, Microwave & Millimeterwave
Communications, Military, Test & Measurement, and Space markets. The Company is headquartered in Chelmsford, Massachusetts.
Mararketing Communications Manager
Hittite Microwave Corporation
2 Elizabeth Dr.
Chelmsford, MA 01824
978-250-3343, ext. 1117