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Hittite's High Performance Wideband LNA & Power Amplifiers Cover DC to 28 GHz

Click to visit the Hittite website

-- Ideal for High Linearity Microwave Radio, EW/ECM, Radar and
   Test Instrumentation

 
Chelmsford, MA, 9/14/2012 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has launched two new power amplifier products which are ideal for microwave radio, EW, ECM and radar applications to 28 GHz. Also released is a unique wideband LNA which operates from 300 MHz to 20 GHz and is ideal for wideband multi-chip-module and subsystem applications.

The HMC994LP5E  is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 28 GHz. The amplifier provides 13 dB of gain, +29 dBm of saturated output power, and 23% PAE from a +10V supply. With up to +38 dBm Output IP3, the HMC994LP5E is ideal for high linearity applications in military and space as well as point-to-point and point-to-multi-point radios. The HMC998LP5E is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 100 MHz and 20 GHz. The amplifier provides 11 dB of gain, +41 dBm output IP3, and +31 dBm of output power at 1 dB gain compression while requiring only 500 mA from a +15V supply. The HMC994LP5E  and the HMC998LP5E both exhibit very flat gain from 4 to 16 GHz and from 3 to 17 GHz respectively, making them ideal for EW, ECM, radar and test equipment applications. Both the HMC994LP5E  and the HMC998LP5E are supplied in leadless QFN 5 x 5 mm surface mount packages and feature I/Os that are internally matched to 50 Ohms.

Trio of Analog Devices’ Best-in-Class High-Speed Transmit D/A Converters Target Aerospace and Defense Applications - RF CafeThe HMC1049 is a GaAs MMIC pHEMT Low Noise Amplifier die which operates between 300 MHz and 20 GHz and employs a novel topology which maintains an excellent low noise figure of 1.7 dB at low frequencies. The amplifier also delivers 16 dB of small signal gain and output IP3 of +27 dBm, while requiring only 70 mA from a    +7 V supply. The P1dB output power of +16 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC1049 is internally matched to 50 Ohms for ease of integration into multichip-modules (MCMs).

Die samples, SMT product samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company's e-commerce site or via direct purchase order. Released data sheets are available on-line at www.hittite.com.


About Hittite Microwave

Hittite Microwave Corporation is an innovative designer and manufacturer of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. The Company's standard and custom products apply analog, digital and mixed-signal semiconductor technologies, which are used in a wide variety of wireless / wired communication and sensor applications for Automotive, Broadband, Cellular Infrastructure, Fiber Optics & Networking, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets. The Company is headquartered in Chelmsford, Massachusetts.


Contact
Beth McGreevy
Mararketing Communications Manager
mcgreevy@hittite.com
Hittite Microwave Corporation
2 Elizabeth Drive
Chelmsford, MA 01824
978-250-3343, ext. 1117
978-250-3373 Fax



Posted  9/17/2012
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