TriQuint Advances DARPA GaN R&D Program Ahead of Schedule
TriQuint Announces GaN Breakthroughs Developing Highly-Advanced, Mixed-Signal
Digital/RF Circuits for DARPA
HILLSBORO, OREGON & RICHARDSON, TEXAS (USA) - January 10, 2012
TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions
supplier and technology innovator, today announced that it has begun
work on Phase II of the Defense Advanced Research Projects Agency ( DARPA)
multi-year Nitride Electronic NeXt-Generation Technology (NEXT) program
as a prime contractor. TriQuint has received $12.67 million in support
of the NEXT contract to date.
NEXT was created by DARPA to research and develop devices suitable
for complex, high dynamic range mixed-signal circuits for future defense/aerospace
applications. Phase II of the NEXT program is contracted to last 18
TriQuint is already exploring and
bringing to market derivative devices made possible by breakthroughs
demonstrated in NEXT Phase I. "NEXT devices provide game-changing technology
for substantially improving performance in applications like phased
array radar and communications," said TriQuint Vice President and General
Manager for Defense Products and Foundry Services, James L. Klein. "The
devices developed under 'NEXT' open-up applications for lower voltage
GaN-based products, which achieve power densities at least four times
higher than GaAs devices. The opportunities are exciting."
Senior Fellow Dr. Paul Saunier leads the NEXT program as principal investigator.
Dr. Saunier and his team reported state-of-the-art results at the 2011
GOMACTech conference in Orlando, Florida. The team achieved an Ft>240
GHz in a GaN circuit.
DARPA's NEXT Phase I concentrated on fabricating
very high frequency devices and meeting defined yield metrics. Phase
II will concentrate on process development in the pursuit of increased
yields while pushing the operating frequency to 400 GHz. Phase III will
seek to extend the operating frequency to 500 GHz with still higher
yields and reduced circuit size. NEXT research also focuses on highly-scaled
enhancement-depletion (E/D) mode GaN mixed-signal devices, similar to
those used in gallium arsenide (GaAs) E/D MMICs. TriQuint creates the
latter, with integrated digital control functionality and power handling
for greater efficiency and cost-effectiveness.
Beyond the NEXT
activity, TriQuint is working on innovative enhancement mode power switching
devices needed for ultra-high efficiency DC-DC converters integrated
with RF amplifiers for radar, communications and EW systems. The technology
is enabling greater sensitivity, while reducing prime power and cost.
For more information about TriQuint defense and aerospace products,
visit us at
www.triquint.com/defense, or register to receive product updates
and TriQuint's newsletter.
FORWARD LOOKING STATEMENTS
This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains
forward-looking statements made pursuant to the Safe Harbor provisions
of the Private Securities Litigation Reform Act of 1995. Readers are
cautioned that forward-looking statements involve risks and uncertainties.
The cautionary statements made in this press release should be read
as being applicable to all related statements wherever they appear.
Statements containing such words as 'leading', 'exceptional', 'high
efficiency', 'key role', 'leading supplier', or similar terms are considered
to contain uncertainty and are forward-looking statements. A number
of factors affect TriQuint's operating results and could cause its actual
future results to differ materially from any results indicated in this
press release or in any other forward-looking statements made by, or
on behalf of, TriQuint including, but not limited to: those associated
with the unpredictability and volatility of customer acceptance of and
demand for our products and technologies, the ability of our production
facilities and those of our vendors to meet demand, the ability of our
production facilities and those of our vendors to produce products with
yields sufficient to maintain profitability, as well as the other "Risk
Factors" set forth in TriQuint's most recent 10-Q report filed with
the Securities and Exchange Commission. This and other reports can be
found on the SEC web site,
www.sec.gov. A reader
of this release should understand that these and other risks could cause
actual results to differ materially from expectations expressed / implied
in forward-looking statements.
FACTS ABOUT TRIQUINT
Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading
global provider of innovative RF solutions and foundry services for
the world's top communications, defense and aerospace companies. People
and organizations around the world need real-time, all-the-time connections;
TriQuint products help reduce the cost and increase the performance
of connected mobile devices and the networks that deliver critical voice,
data and video communications. With the industry's broadest technology
portfolio, recognized R&D leadership, and expertise in high-volume
manufacturing, TriQuint creates standard and custom products using gallium
arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW)
and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified
manufacturing facilities in the U.S., production in Costa Rica, and
design centers in North America and Germany. For more information, visit
TriQuint: Connecting the Digital World to the Global Network®
TriQuint Media Contact: Mark Andrews
Strategic Marketing Communications
TriQuint Semiconductor, Inc.
Tel: +1 (407) 884-3404
: +1 (407) 353-8727
Defense Solutions Marketing: Roger Hall
Defense Products & Foundry Services Marketing Director
Tel: +1 972 994 8289
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