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TriQuint Advances DARPA GaN R&D Program Ahead of Schedule

-- TriQuint Announces GaN Breakthroughs Developing Highly-Advanced, Mixed-Signal Digital/RF Circuits for DARPA

   TriQuint Semiconductor

HILLSBORO, OREGON & RICHARDSON, TEXAS (USA) - January 10, 2012 - TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions supplier and technology innovator, today announced that it has begun work on Phase II of the Defense Advanced Research Projects Agency ( DARPA) multi-year Nitride Electronic NeXt-Generation Technology (NEXT) program as a prime contractor. TriQuint has received $12.67 million in support of the NEXT contract to date.

NEXT was created by DARPA to research and develop devices suitable for complex, high dynamic range mixed-signal circuits for future defense/aerospace applications. Phase II of the NEXT program is contracted to last 18 months.

TriQuint is already exploring and bringing to market derivative devices made possible by breakthroughs demonstrated in NEXT Phase I. "NEXT devices provide game-changing technology for substantially improving performance in applications like phased array radar and communications," said TriQuint Vice President and General Manager for Defense Products and Foundry Services, James L. Klein. "The devices developed under 'NEXT' open-up applications for lower voltage GaN-based products, which achieve power densities at least four times higher than GaAs devices. The opportunities are exciting."

TriQuint Senior Fellow Dr. Paul Saunier leads the NEXT program as principal investigator. Dr. Saunier and his team reported state-of-the-art results at the 2011 GOMACTech conference in Orlando, Florida. The team achieved an Ft>240 GHz in a GaN circuit.

DARPA's NEXT Phase I concentrated on fabricating very high frequency devices and meeting defined yield metrics. Phase II will concentrate on process development in the pursuit of increased yields while pushing the operating frequency to 400 GHz. Phase III will seek to extend the operating frequency to 500 GHz with still higher yields and reduced circuit size. NEXT research also focuses on highly-scaled enhancement-depletion (E/D) mode GaN mixed-signal devices, similar to those used in gallium arsenide (GaAs) E/D MMICs. TriQuint creates the latter, with integrated digital control functionality and power handling for greater efficiency and cost-effectiveness.

Beyond the NEXT activity, TriQuint is working on innovative enhancement mode power switching devices needed for ultra-high efficiency DC-DC converters integrated with RF amplifiers for radar, communications and EW systems. The technology is enabling greater sensitivity, while reducing prime power and cost.

TriQuint Gallium Nitride Product Innovation, Honors & Resources:


For more information about TriQuint defense and aerospace products, visit us at www.triquint.com/defense, or register to receive product updates and TriQuint's newsletter.

FORWARD LOOKING STATEMENTS
This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains forward-looking statements made pursuant to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. Readers are cautioned that forward-looking statements involve risks and uncertainties. The cautionary statements made in this press release should be read as being applicable to all related statements wherever they appear. Statements containing such words as 'leading', 'exceptional', 'high efficiency', 'key role', 'leading supplier', or similar terms are considered to contain uncertainty and are forward-looking statements. A number of factors affect TriQuint's operating results and could cause its actual future results to differ materially from any results indicated in this press release or in any other forward-looking statements made by, or on behalf of, TriQuint including, but not limited to: those associated with the unpredictability and volatility of customer acceptance of and demand for our products and technologies, the ability of our production facilities and those of our vendors to meet demand, the ability of our production facilities and those of our vendors to produce products with yields sufficient to maintain profitability, as well as the other "Risk Factors" set forth in TriQuint's most recent 10-Q report filed with the Securities and Exchange Commission. This and other reports can be found on the SEC web site, www.sec.gov. A reader of this release should understand that these and other risks could cause actual results to differ materially from expectations expressed / implied in forward-looking statements.

FACTS ABOUT TRIQUINT
Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world's top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry's broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visit www.triquint.com.

TriQuint: Connecting the Digital World to the Global Network®

TriQuint Media Contact: Mark Andrews
Strategic Marketing Communications Mgr.
TriQuint Semiconductor, Inc.
Tel: +1 (407) 884-3404
Mobile : +1 (407) 353-8727
E-mail: mandrews@tqs.com

Defense Solutions Marketing: Roger Hall
Defense Products & Foundry Services Marketing Director
TriQuint Semiconductor, Inc.
Tel: +1 972 994 8289
E-mail: roger.hall@tqs.com





Posted  2/15/2012
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