RFMW Press Release - May 18, 2011
RFMW and NXP Introduce 1200 W LDMOS Transistor
May 18, 2011
The NXP BLF178P is a 1200 W LDMOS power transistor targeted for use in broadcast (FM Transmitter) designs as well as industrial, scientific and medical (ISM) applications in the HF to 110 MHz band. This high voltage (43 – 50 V) transistor offers a lower cost alternative to devices currently on the market and provides high gain (26 dB), high power (1200 W) and high efficiency (75%). Although characterized to 110 MHz, the BLF178P operates to 500MHz making it ideal for applications such as military radio, RF jamming, and exciters for MRI and CO2 lasers. This extremely rugged device is housed in a flanged Gemini package.
For more information please contact:
NXP Stocking Distributor
90 Great Oaks Blvd. #107
San Jose, Ca. 95119