RFMD Expands Product Offerings for Cellular Backhaul Market with Highly Integrated Point-to-Point Radio Chipsets
BALTIMORE, June 8, 2011 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of its multi-market product portfolio to include several point-to-point (P2P) radio chipsets targeting the growing cellular backhaul market. The highly integrated radio chipsets combine multiple RF/microwave radio front end components and expand RFMD's product portfolio to encompass all critical RF and IF functions in the P2P radio transceiver.
The P2P radio market is growing rapidly as the proliferation of smartphones and the increasing demand for mobile data are forcing cellular operators to expand capacity in cellular backhaul networks. RFMD's highly integrated P2P radio chipsets help to satisfy operators' capacity expansion requirements by optimizing each front end component for next-generation high-capacity 3G/4G radios using complex modulation schemes. The front end components deliver industry-leading narrowband performance, enabling the realization of state-of-the-art radio performance. Additionally, the broadband nature of the front end components enables radio designers to maximize design flexibility and simplify inventory bill-of-material control.
Jeff Shealy, general manager of RFMD's Defense and Power business unit, said, "RFMD is rapidly expanding our product portfolio in support of the Point-to-Point microwave radio market. With the launch of these highly integrated radio chipsets, RFMD enables our customers to develop high-reliability, next-generation Point-to-Point radio solutions while reducing design time requirements and lowering overall bill-of-material costs."
Each new RFMD P2P radio chipset is available in a surface mount QFN package. The integrated up-converters include a LO amplifier (with integrated x2 multiplier where applicable), IQ mixer, VVA and driver amplifier in a single package. The integrated down-converters utilize 0.15um gallium arsenide (GaAs) technology to deliver industry-leading IIP3 and noise figure performance. Finally, the integrated MMIC VCOs exhibit industry-leading phase noise performance coupled with flat output power over the frequency tuning bandwidth. To complement the new radio chipsets, RFMD also offers a comprehensive portfolio of converters and gain blocks aimed at the IF section of the radio.
RFMD is exhibiting the above chipsets at the IEEE International Microwave Symposium 2011, June 6-8, at the Baltimore Convention Center, in Booth 1402.
Samples and production quantities are available now through RFMD's online store at http://www.rfmd.com/products or through local RFMD sales channels.
VP of Investor Relations
RF Micro Devices