RFMD Expands Product Offerings for Cellular Backhaul Market with Highly Integrated Point-to-Point Radio
BALTIMORE, June 8, 2011 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design
and manufacture of high-performance radio frequency components and compound semiconductor technologies, today
announced the expansion of its multi-market product portfolio to include several point-to-point (P2P) radio
chipsets targeting the growing cellular backhaul market. The highly integrated radio chipsets combine multiple
RF/microwave radio front end components and expand RFMD's product portfolio to encompass all critical RF and IF
functions in the P2P radio transceiver.
The P2P radio market is growing rapidly as the proliferation of smartphones and the increasing demand for
mobile data are forcing cellular operators to expand capacity in cellular backhaul networks. RFMD's highly
integrated P2P radio chipsets help to satisfy operators' capacity expansion requirements by optimizing each front
end component for next-generation high-capacity 3G/4G radios using complex modulation schemes. The front end
components deliver industry-leading narrowband performance, enabling the realization of state-of-the-art radio
performance. Additionally, the broadband nature of the front end components enables radio designers to maximize
design flexibility and simplify inventory bill-of-material control.
Jeff Shealy, general manager of RFMD's Defense and Power business unit, said, "RFMD is rapidly expanding
our product portfolio in support of the Point-to-Point microwave radio market. With the launch of these highly
integrated radio chipsets, RFMD enables our customers to develop high-reliability, next-generation Point-to-Point
radio solutions while reducing design time requirements and lowering overall bill-of-material costs."
Each new RFMD P2P radio chipset is available in a surface mount QFN package. The integrated up-converters
include a LO amplifier (with integrated x2 multiplier where applicable), IQ mixer, VVA and driver amplifier in a
single package. The integrated down-converters utilize 0.15um gallium arsenide (GaAs) technology to deliver
industry-leading IIP3 and noise figure performance. Finally, the integrated MMIC VCOs exhibit industry-leading
phase noise performance coupled with flat output power over the frequency tuning bandwidth. To complement the new
radio chipsets, RFMD also offers a comprehensive portfolio of converters and gain blocks aimed at the IF section
of the radio.
RFMD is exhibiting the above chipsets at the IEEE International Microwave Symposium 2011, June 6-8, at the
Baltimore Convention Center, in Booth 1402.
Samples and production quantities are available now through RFMD's online
store at http://www.rfmd.com/products
or through local RFMD sales channels.
VP of Investor Relations
RF Micro Devices