RF Micro Devices® Press Release - June 7, 2011
RFMD Announces Qualification of GaN Power Semiconductor Process
65 Volt Operation
-- High Reliability 65V GaN Process is Currently Available to Foundry
Customers Through RFMD's Foundry Services Business Unit
BALTIMORE, June 7, 2011 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc.
(Nasdaq:RFMD), a global leader in the design and manufacture of high-performance
radio frequency components and compound semiconductor technologies,
today announced it has qualified its GaN1 power semiconductor process
technology for 65V operation. The high reliability power semiconductor
process technology supports RFMD's GaN-based power semiconductor product
designs and is also available to foundry customers through RFMD's Foundry
Services business unit. Previously, RFMD's GaN1 power semiconductor
process technology had been qualified for 48V operation. The increase
in operating voltage from 48V to 65V enables miniature, 0.5kW power
devices with high operating efficiency for L- and S-Band military and
civilian radar applications.
Bob Van Buskirk, president of RFMD's
Multi-Market Products Group (MPG), said, "The qualification of our 65V
GaN1 power process technology enables RFMD to target multiple higher
voltage market opportunities across MPG's diversified markets while
helping our foundry customers to design smaller periphery die for high
power applications. RFMD continues to optimize our game-changing GaN
process technology for both foundry customers and proprietary RFMD product
designs, with particular emphasis on higher peak efficiency, lower power
consumption and higher linearity."
RFMD's 48V GaN1 process technology
is an established performance leader in the high power semiconductor
industry, and RFMD's 65V GaN1 process technology moves the performance
bar even higher. RFMD's 65V GaN1 process technology demonstrates a Mean-Time-to-Failure
(MTTF) of 43 million hours with a channel temperature of 200 degrees
Celsius at power densities of 10Watts, a significant industry performance
benchmark. The high reliability power semiconductor process is ideally
suited for higher voltage operations in next generation military, radar,
and public/defense mobile radio applications.
on RFMD's Foundry Services business unit can be obtained by contacting
. RFMD is showcasing its foundry services
offerings at the IEEE international Microwave Symposium 2011, June 6-8,
at the Baltimore Convention Center, in Booth 1402.
RF Micro Devices, Inc. (Nasdaq:RFMD)
is a global leader in the design and manufacture of high-performance
radio frequency components and compound semiconductor technologies.
RFMD's products enable worldwide mobility, provide enhanced connectivity
and support advanced functionality in the cellular handset, wireless
infrastructure, wireless local area network (WLAN), CATV/broadband and
aerospace and defense markets. RFMD is recognized for its diverse portfolio
of semiconductor technologies and RF systems expertise and is a preferred
supplier to the world's leading mobile device, customer premises and
communications equipment providers.
Headquartered in Greensboro,
N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with
worldwide engineering, design, sales and service facilities. RFMD is
traded on the NASDAQ Global Select Market under the symbol RFMD. For
more information, please visit RFMD's web site at
This press release includes "forward-looking
statements" within the meaning of the safe harbor provisions of the
Private Securities Litigation Reform Act of 1995. These forward-looking
statements include, but are not limited to, statements about our plans,
objectives, representations and contentions and are not historical facts
and typically are identified by use of terms such as "may," "will,"
"should," "could," "expect," "plan," "anticipate," "believe," "estimate,"
"predict," "potential," "continue" and similar words, although some
forward-looking statements are expressed differently. You should be
aware that the forward-looking statements included herein represent
management's current judgment and expectations, but our actual results,
events and performance could differ materially from those expressed
or implied by forward-looking statements. We do not intend to update
any of these forward-looking statements or publicly announce the results
of any revisions to these forward-looking statements, other than as
is required under the federal securities laws. RF Micro Devices' business
is subject to numerous risks and uncertainties, including variability
in operating results, risks associated with the impact of global macroeconomic
and credit conditions on our business and the business of our suppliers
and customers, our reliance on a few large customers for a substantial
portion of our revenue, the rate of growth and development of wireless
markets, our ability to bring new products to market, our reliance on
inclusion in third party reference designs for a portion of our revenue,
our ability to manage channel partner and customer relationships, risks
associated with the operation of our wafer fabrication, molecular beam
epitaxy, assembly and test and tape and reel facilities, our ability
to complete acquisitions and integrate acquired companies, including
the risk that we may not realize expected synergies from our business
combinations, our ability to attract and retain skilled personnel and
develop leaders, variability in production yields, raw material costs
and availability, our ability to reduce costs and improve margins in
response to declining average selling prices, our ability to adjust
production capacity in a timely fashion in response to changes in demand
for our products, dependence on gallium arsenide (GaAs) for the majority
of our products, dependence on third parties, and substantial reliance
on international sales and operations. These and other risks and uncertainties,
which are described in more detail in RF Micro Devices' most recent
Annual Report on Form 10-K and other reports and statements filed with
the Securities and Exchange Commission, could cause actual results and
developments to be materially different from those expressed or implied
by any of these forward-looking statements.
RF MICRO DEVICES®
and RFMD® are trademarks of RFMD, LLC. All other trade names, trademarks
and registered trademarks are the property of their respective owners.
VP of Investor
RF Micro Devices
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