RF Micro Devices® Press Release - June 7, 2011
RFMD Announces Qualification of GaN Power Semiconductor Process
-- High Reliability 65V GaN Process is Currently Available to Foundry Customers Through RFMD's Foundry Services
for 65 Volt Operation
BALTIMORE, June 7, 2011
(GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of
high-performance radio frequency components and compound semiconductor technologies, today announced it has
qualified its GaN1 power semiconductor process technology for 65V operation. The high reliability power
semiconductor process technology supports RFMD's GaN-based power semiconductor product designs and is also
available to foundry customers through RFMD's Foundry Services business unit. Previously, RFMD's GaN1 power
semiconductor process technology had been qualified for 48V operation. The increase in operating voltage from 48V
to 65V enables miniature, 0.5kW power devices with high operating efficiency for L- and S-Band military and
civilian radar applications.
Bob Van Buskirk, president of RFMD's Multi-Market Products Group (MPG), said,
"The qualification of our 65V GaN1 power process technology enables RFMD to target multiple higher voltage market
opportunities across MPG's diversified markets while helping our foundry customers to design smaller periphery die
for high power applications. RFMD continues to optimize our game-changing GaN process technology for both foundry
customers and proprietary RFMD product designs, with particular emphasis on higher peak efficiency, lower power
consumption and higher linearity."
RFMD's 48V GaN1 process technology is an established performance leader in the high power semiconductor industry,
and RFMD's 65V GaN1 process technology moves the performance bar even higher. RFMD's 65V GaN1 process technology
demonstrates a Mean-Time-to-Failure (MTTF) of 43 million hours with a channel temperature of 200 degrees Celsius
at power densities of 10Watts, a significant industry performance benchmark. The high reliability power
semiconductor process is ideally suited for higher voltage operations in next generation military, radar, and
public/defense mobile radio applications.
Additional information on RFMD's Foundry Services business unit can
be obtained by contacting
RFMDFoundryServices@rfmd.com. RFMD is showcasing its foundry services offerings at the IEEE international
Microwave Symposium 2011, June 6-8, at the Baltimore Convention Center, in Booth 1402.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of
high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable
worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset,
wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.
RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at
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provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but
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intend to update any of these forward-looking statements or publicly announce the results of any revisions to
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business is subject to numerous risks and uncertainties, including variability in operating results, risks
associated with the impact of global macroeconomic and credit conditions on our business and the business of our
suppliers and customers, our reliance on a few large customers for a substantial portion of our revenue, the rate
of growth and development of wireless markets, our ability to bring new products to market, our reliance on
inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and
customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy,
assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired
companies, including the risk that we may not realize expected synergies from our business combinations, our
ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw
material costs and availability, our ability to reduce costs and improve margins in response to declining average
selling prices, our ability to adjust production capacity in a timely fashion in response to changes in demand for
our products, dependence on gallium arsenide (GaAs) for the majority of our products, dependence on third parties,
and substantial reliance on international sales and operations. These and other risks and uncertainties, which are
described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and
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materially different from those expressed or implied by any of these forward-looking statements.
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VP of Investor Relations
RF Micro Devices