RFMD Unveils Power Platform for Entry-Level 3G Handsets
BARCELONA, Spain, Feb. 14, 2011 /PRNewswire/ -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in
the design and manufacture of high-performance radio frequency components and compound semiconductor technologies,
today announced the expansion of the Company's 3G product portfolio to include a complete power platform for
entry-level 3G handsets. The RF323x power platform, comprised of the RF323x and RF72xx product families, provides
handset manufacturers a complete reference design for the implementation of multi-region multimode 3G handset
RFMD's RF323x power platform addresses the challenges confronting handset manufacturers as they seek to
meet the increasing global demand for affordable smartphones. Using RFMD's RF323x power platform, designers of
entry-level 3G smartphones can achieve the optimum balance of cost, performance and flexibility in the RF front
end while satisfying critical requirements for quality and reliability in high-volume handset manufacturing.
Eric Creviston, president of RFMD's Cellular Products Group (CPG), said, "Our customers see cost as a key
driver in the entry-level 3G segment and want flexible front end solutions that scale easily to address multiple
operator and regional requirements. Our high-efficiency 3G entry power platforms provide a full array of tiered
options at compelling price points, setting the benchmark for ease of implementation and current consumption in a
single, scalable reference design."
RFMD's RF323x power platform features the high-efficiency PowerStar®-based RF323x 2G transmit module with
pin-compatible options supporting either one or two bands of WCDMA. The pin-compatible WCDMA PAs are available in
two product family options. The first option, the RF724x family of WCDMA power amplifiers, addresses all major
frequency bands and delivers industry-leading peak efficiency and DG.09 as low as 13 mA through the use of
multi-bias control. The second option, the RF722x family of WCDMA power amplifiers, also addresses all major
frequency bands and is optimized for chipsets using 3-mode control schemes.
RFMD's RF323x power platform for entry-level 3G handsets is compatible with major chipset providers
including Qualcomm, Mediatek, Broadcom and ST Ericsson. Samples are available now, and volume production is
anticipated in the March 2011 quarter.
RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and
communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO
14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on
the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at
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harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements
include, but are not limited to, statements about our plans, objectives, representations and contentions and are
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events and performance could differ materially from those expressed or implied by forward-looking statements. We
do not intend to update any of these forward-looking statements or publicly announce the results of any revisions
to these forward-looking statements, other than as is required under the federal securities laws. RF Micro
Devices' business is subject to numerous risks and uncertainties, including variability in operating results,
risks associated with the impact of global macroeconomic and credit conditions on our business and the business of
our suppliers and customers, our reliance on a few large customers for a substantial portion of our revenue, the
rate of growth and development of wireless markets, our ability to bring new products to market, our reliance on
inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and
customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy,
assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired
companies, including the risk that we may not realize expected synergies from our business combinations, our
ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw
material costs and availability, our ability to reduce costs and improve margins in response to declining average
selling prices, our ability to adjust production capacity in a timely fashion in response to changes in demand for
our products, dependence on gallium arsenide (GaAs) for the majority of our products, dependence on third parties,
and substantial reliance on international sales and operations. These and other risks and uncertainties, which are
described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and
statements filed with the Securities and Exchange Commission, could cause actual results and developments to be
materially different from those expressed or implied by any of these forward-looking statements.
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VP of Investor Relations
RF Micro Devices