RF Micro Devices® Press Release - October 27, 2011
RFMD Intros RFHA1003 30-512 MHz, 9 W GaN Wideband Power Amplifier
Sr. Manager, Communications
RFHA1003 GaN Power IC (PIC) is a wideband
power amplifier designed for continuous wave
and pulsed applications such as military communications,
electronic warfare, wireless infrastructure,
radar, two-way radios and general purpose amplification.
Using an advanced high power density Gallium
Nitride (GaN) semiconductor process, this high-performance
amplifier achieves high efficiency, flat gain
and power over a large instantaneous bandwidth
in a single amplifier design. This GaN discrete
amplifier are 50Ω input-matched packaged in
a small form factor 5x6mm SOIC-8 outline air
cavity ceramic package that provides excellent
thermal stability through the use of advanced
heat sink and power dissipation technologies.
Ease of integration is accomplished through
the incorporation of optimized input matching
network within the package that provides wideband
gain and power performance in a single amplifier.
An external output match offers the flexibility
of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
- Advanced GaN HEMT and Heat Sink Technology
- Input Internally Matched to 50Ω
- 28V Operation, Output Power of 9W
- 30MHz to 512MHz Instantaneous Bandwidth
- Gain: 19dB
- Power Added Efficiency: 70%
- Large-Signal Models Available
- EAR99 export control
- Milcom, Public Mobile Radio
- Electronic Warfare
- Power Amplifier Stage for Commercial
- Civilian and Military Radar
- General Purpose Tx Amplification
For more information on RFHA1003, visit
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