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RF Micro Devices® Press Release - October 26, 2011

 RFMD Intros RF3928 GaN Wideband Pulsed Power Amplifier
RFMD New Product Alert
Contact:
Irma Swain
Sr. Manager, Communications
RFMD
336-931-6653
iswain@rfmd.com

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RF3928 GaN Wideband Pulsed Power Amplifier

RF3928 50V 280W high power discrete amplifier designed for S-Band pulsed radarThe RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance (ATCS), and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. High terminal impedance enables wideband operation and minimizes overall PCB real estate. This matched GaN transistor is packaged in a hermetic, flanged ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.

Features
  • Wideband Operation 2.8 GHz to 3.4 GHz
  • Advanced GaN HEMT and Heat-Sink Technology
  • Optimized Evaluation Board Layout for 50 Ω Operation
  • Small Signal Gain: 12 dB
  • Drain Efficiency: 52 %
Applications
  • Radar
  • Air Traffic Control and Surveillance
  • General Purpose Broadband Amplifiers
RF3928 electrical specs

For more information on RF3928, visit
https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RF3928.aspx.



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Posted  10/26/2011
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