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RF Micro Devices® Press Release - October 25, 2011

 RFMD Intros RF3826 30 MHz to 2500 MHz, 9 W
GaN Wideband Power Amplifier
RFMD New Product Alert
Contact:
Irma Swain
Sr. Manager, Communications
RFMD
336-931-6653
iswain@rfmd.com

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RF3826 30 MHz to 2500 MHz, 9 W GaN Wideband Power Amplifier

RF3826 30MHz to 2500MHz, 9W GaN Wideband Power AmplifierRFMD’s new RF3826 is a wideband Power Amplifier designed for continuous wave and pulsed applications such as wireless infrastructure, RADAR, two-way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input-matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

Features
  • Advanced GaN HEMT and Heat-Sink Technology
  • Input Internally Matched to 50Ω
  • Output Power of 9 W
  • 30 MHz to 2500 MHz Instantaneous Bandwidth
  • Gain: 12 dB
  • Power Added Efficiency: 45% (30 MHz to 2500 MHz), 50% (200 MHz to 1800 MHz)
  • Large Signal Models Available
  • EAR99 Export Control
Applications
  • Class AB Operation for Public Mobile Radio
  • Test and Instrumentation
  • Power Amplifier Stage for Commercial Wireless Infrastructure
  • Civilian and Military Radar
  • General Purpose Tx Amplification
RF3826 Electrical Specifications

For more information on RF3826, visit
https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RF3826.aspx.

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Posted  10/25/2011
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