Hittite Press Release - August 23, 2011 |
Hittite's New GaN MMIC Power Amplifier Delivers 10W from 10 MHz to 10 GHz-- Wideband PA is Ideal for Electronic Warfare and Test Equipment Applications  Chelmsford,
MA, August 23, 2011 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions
for communication & military markets, has introduced a new GaN HEMT MMIC Wideband Power Amplifier which is ideal
for test & measurement equipment and military EW and ECM applications up to 10 GHz.The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier Chip which operates between 0.01 and 10 GHz. This wideband power amplifier provides 11 dB of gain, +38 dBm of output power at 1 dB gain compression and +47 dBm output IP3 at midband. For less demanding applications, the HMC999 can be operated from a drain voltage as low as +28V while still producing 5 Watts of saturated output power.  When biased
for maximum output power, the
HMC999 consumes 1100 mA of
quiescent current from a +48V supply, and achieves approximately 18% power added efficiency at saturation. This
compact MMIC power amplifier delivers 10 Watts of saturated output power in a chip area of only 7 mm2, equating to
a power density of 1.5 W/mm2 across 3 decades of bandwidth. The HMC999
is extremely robust and is designed to reliably operate into partially reflective loads and to tolerate very high
incident power levels.The HMC999 is matched to 50 Ohms on-chip, and requires several external bias decoupling capacitors and an external bias tee for drain bias injection. Samples are available from stock and can be ordered via the company's e-commerce site or via direct purchase order. Released data sheets are available on-line at www.hittite.com. Contact Beth McGreevy MarCom Manager mcgreevy@hittite.com Hittite Microwave Corporation 20 Alpha Road Chelmsford, MA 01824 Phone: 978-250-3343 FFax: 978-250-3373 sales@hittite.com www.hittite.com Posted 8/25/2011 |