Hittite's New GaN MMIC Power Amplifier Delivers 10W from 10 MHz to 10 GHz
-- Wideband PA is Ideal for Electronic Warfare and Test Equipment Applications
MA, August 23, 2011 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions
for communication & military markets, has introduced a new GaN HEMT MMIC Wideband Power Amplifier which is ideal
for test & measurement equipment and military EW and ECM applications up to 10 GHz.
is a GaN HEMT MMIC
Distributed Power Amplifier Chip which operates between 0.01 and 10 GHz. This wideband power amplifier provides 11
dB of gain, +38 dBm of output power at 1 dB gain compression and +47 dBm output IP3 at midband. For less demanding
can be operated from a
drain voltage as low as +28V while still producing 5 Watts of saturated output power.
for maximum output power, the
consumes 1100 mA of
quiescent current from a +48V supply, and achieves approximately 18% power added efficiency at saturation. This
compact MMIC power amplifier delivers 10 Watts of saturated output power in a chip area of only 7 mm2, equating to
a power density of 1.5 W/mm2 across 3 decades of bandwidth. The
is extremely robust and is designed to reliably operate into partially reflective loads and to tolerate very high
incident power levels.
is matched to 50 Ohms
on-chip, and requires several external bias decoupling capacitors and an external bias tee for drain bias
injection. Samples are available from stock and can be ordered via the company's e-commerce site or via direct
purchase order. Released data sheets are available on-line at
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824