Hittite's New Wideband Driver Amplifier Spans DC to 48 GHz
-- GaAs pHEMT MMIC Distributed Amplifier Delivers 0.25 Watts Output Power
MA, 10/25/2011 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for
communication & military markets, announces the release of a new Wideband GaAs pHEMT MMIC Distributed Power
Amplifier die which is ideal for military EW, test & measurement equipment, and broadband telecom equipment
applications up to 48 GHz.
is a 0.25 Watt GaAs
pHEMT MMIC Distributed Power Amplifier which operates between DC and 48 GHz. The amplifier provides 12 dB of gain,
+32 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while consuming only 150 mA from a +10 V
exhibits a slightly
positive gain slope from 10 to 35 GHz, making it ideal for EW, ECM, Radar and test equipment applications.
is offered in bare
die form and features RF I/Os which are internally matched to 50 Ohms. Requiring only a few external bias
decoupling components, the
Amplifier was developed for simplified integration into Multi-Chip-Modules (MCMs) and other higher level
assemblies and subsystems. The
broad line of distributed low noise, driver, and power amplifiers, with frequency coverage up to 65 GHz.
About Hittite Microwave
Hittite Microwave Corporation is an innovative designer and manufacturer of high performance integrated
circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and
millimeterwave applications covering DC to 110 GHz. The Company's standard and custom products apply analog,
digital and mixed-signal semiconductor technologies, which are used in a wide variety of wireless / wired
communication and sensor applications for Automotive, Broadband, Cellular Infrastructure, Fiber Optics &
Networking, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets. The
Company is headquartered in Chelmsford, Massachusetts.
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824