Electronics World articles Popular Electronics articles QST articles Radio & TV News articles Radio-Craft articles Radio-Electronics articles Short Wave Craft articles Wireless World articles Google Search of RF Cafe website Sitemap Electronics Equations Mathematics Equations Equations physics Manufacturers & distributors Engineer Jobs LinkedIn Crosswords Engineering Humor Kirt's Cogitations Engineering Event Calendar RF Engineering Quizzes USAF radar shop Notable Quotes App Notes Calculators Education Engineering Magazines Engineering magazine articles Engineering software Engineering smorgasbord RF Cafe Archives RF Cascade Workbook 2018 RF Stencils for Visio RF & EE Shapes for Word Advertising RF Cafe Homepage Sudoku puzzles Thank you for visiting RF Cafe!

Richardson RFPD Press Release - September 20, 2011

Richardson RFPD Announces Design-In Support and Immediate
Availability of Breakthrough LDMOS RF Power Transistors
for UHF Broadcast

-  Freescale™ Semiconductor’s New MRFE6VP8600H and MRFE6VP8600HS

Richardson RFPD

MRFE6VP8600H and MRFE6VP8600HSSeptember 20, 2011 – LaFox, Illinois: Richardson RFPD, Inc. today announces the availability of two breakthrough 50V LDMOS RF power transistors which set new standards for ruggedness in the UHF broadcast industry. The MRFE6VP8600H and MRFE6VP8600HS are push-pull power transistors that provide enhanced efficiency and operate over the 470 – 860 MHz frequency band. These devices are capable of transmitting highly-linear, 125W average DVB-T output power, with a peak envelope power output capability of over 600W. Moreover, these devices are fully capable of withstanding a nearly 100% mismatched load, specified as greater than 65:1 VSWR at all phase angles, with no damage to the transistor. Ultimately, the MRFE6VP8600H and MRFE6VP8600HS provide a unique combination of linear power amplification, high efficiency and enhanced ruggedness never before seen in the UHF broadcast industry.

Key features:
·   Capable of 18.8 – 20.0 dB gain
·   P1dB > 600 watts
·   Average output power rated at 125 watts (DVB-T 8k OFDM)
·   Rugged devices withstand a 65:1 VSWR load mismatch
      with no damage over all phase angles
    Integrated enhanced ESD protection
·   High power-added-efficiency, typically 30 percent (up to
      45 percent in Doherty configuration)
·   Extended operating range characterized from 20V to 50V
      for use with drain modulation schemes (ex. envelope
      tracking)
·   Extended negative gate-source voltage range (-6V to
     +10V)
·   Two air cavity ceramic package options: choose bolt-
      down or solder-attach
·   RoHS compliant
 
Design advantages:
·   Reduction in the total number of transistors and combiner stages needed for a given output
      power level allows for simplified overall UHF transmitter design and improved reliability.
·   Broadband internal input impedance matching means these devices are easier to implement.
·   Extended negative gate-source voltage range provides improved Class C operation (such as
      when used in the peaking stage of a Doherty amplifier).
·   High-efficiency means less current is consumed, and as a result less power is wasted as heat. A
      UHF transmitter designed with these devices can use 15% less energy than previous generation
      transistors.
·   Enhanced ruggedness makes it possible to use more simplified transmitter protection circuitry.
 
The MRFE6VP8600H and MRFE6VP8600HS are in stock and ready for shipment. Full design support and product documentation is readily available. To find more information, or to purchase these products today on the Richardson RFPD website, please visit our Microsite for Freescale Semiconductor’s Rugged 50V LDMOS Transistors at www.richardsonrfpd.com/ruggedldmos. The microsite contains a broad array of technical support material including white papers, application notes, reference designs, and links to ADS/AWR models. The new devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support.

In addition, Richardson RFPD and Freescale Semiconductor will assist all interested RF engineers by providing specific design recommendations for these rugged LDMOS transistors during an upcoming free webinar. This webinar will be hosted by Microwave Journal on Thursday, September 29, 2011, beginning at 8am PT (11am ET / 3pm UTC). Registration is available through Microwave Journal’s Events site.
 

About Richardson RFPD, Inc.:
Richardson RFPD, Inc., an Arrow Electronics Company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. Relationships with the industry’s top component suppliers enable Richardson RFPD to meet the total engineering needs of each customer. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide support for all aspects of customers’ go-to-market strategy, from prototype to production.  More information is available online at www.richardsonrfpd.com.

 
# # # #


For details, contact:
Bill Murphy
Technical Marketing Manager | Richardson RFPD
work 630-208-3688 | fax 630-208-2662 | bmurphy@richardsonrfpd.com






Posted  9/20/2011
Anatech Electronics (RF Filters) - RF Cafe
Windfreak Technologies Res-Net Microwave - RF Cafe
About RF Cafe
Kirt Blattenberger - RF Cafe Webmaster
Copyright: 1996 - 2024
Webmaster:
    Kirt Blattenberger,
    BSEE - KB3UON

RF Cafe began life in 1996 as "RF Tools" in an AOL screen name web space totaling 2 MB. Its primary purpose was to provide me with ready access to commonly needed formulas and reference material while performing my work as an RF system and circuit design engineer. The Internet was still largely an unknown entity at the time and not much was available in the form of WYSIWYG ...

All trademarks, copyrights, patents, and other rights of ownership to images and text used on the RF Cafe website are hereby acknowledged.

My Hobby Website:  AirplanesAndRockets.com

spacer