Richardson RFPD Press Release - July 20, 2011
July 20, 2011 – LaFox, Illinois: Richardson RFPD, Inc. today announces a new, two-stage broadband low noise amplifier (CHA3218-99F/00) designed by United Monolithic Semiconductors (UMS). The GaAs MMIC is optimized for use in 2 - 18 GHz defense and space applications, and features 24 dB of gain while providing very low noise figure and high linearity. The part is also well-suited for a wide range of commercial microwave and millimeter-wave applications and systems. It is manufactured using a robust 0.15µm gate length pHEMT process, and is available as a bare die.
Key features of the CHA3218-99F/00:
· Noise Figure: as low as 1.8 dB (@ 14 GHz)
· Gain: 24 dB
· Output Power: +15 dBm (@ P1dB)
· High Linearity: OIP3 = +25 dBm
· Typical Bias: 4V drain supply, 120mA drain current, -0.45V gate supply
· Chip Size: 3.07mm x 1.57mm x 0.1mm
· RoHS Compliant
The CHA3218-99F/00 and its datasheet are available now. To find more information, or to purchase this product today on the Richardson RFPD website, please visit the CHA3218-99F/00 webpage. The LNA device is also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn more about additional products from UMS, please visit the storefront webpage.
About Richardson RFPD, Inc.
Richardson RFPD, Inc., an Arrow Electronics Company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. Relationships with the industry’s top component suppliers enable Richardson RFPD to meet the total engineering needs of each customer. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide support for all aspects of customers’ go-to-market strategy, from prototype to production. More information is available online at www.richardsonrfpd.com.
For details, contact:
Director, Marketing Communications
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