RF Micro Devices® Press Release - May 24, 2010
ANAHEIM, Calif., May 24, 2010 (GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high performance radio frequency components and compound semiconductor technologies, today announced a new portfolio of 10.0 GHz - 16.0 GHz GaAs pHEMT I/Q converters. The innovative I/Q converters are the first in a series of new microwave radio front ends to be launched by RFMD for wireless backhaul applications.
RFMD's growing portfolio of microwave radio front ends helps network operators to quickly and cost-effectively upgrade their backhaul networks to satisfy the increasing requirements of global mobile data uptake. The broadband frequency performance of RFMD's newest I/Q converters enables a single product to support multiple radio bands. This allows customers to use one part across multiple radio systems, greatly simplifying inventory management. Additionally, each new I/Q converter features I/Q mixer topologies to reduce unwanted sideband filtering and support IF frequencies from DC to 4GHz, helping to simplify the radio design process.
RFMD's newest available microwave radio front ends are the RFUV5945A, the RFRX5933A and the RFMX5986A. The RFUV5945A and RFRX5933A are available in a compact 5mm x 5mm QFN package, and the RFMX5986A is offered in a fully-molded 4mm x 4mm QFN package.
The RFRX5933A targets receive applications and is an integrated 10.0 GHz - 16.0 GHz downconverter comprising a low noise amplifier (LNA), I/Q image rejection mixer and LO buffer amplifier. The broadband RFRX5933A exhibits an impressive noise figure of 2dB while maintaining 13dB conversion gain, 25dBc of image rejection and IIP3 performance of 3dBm. With an input power of -20dBm, the RFRX5933A offers radio designers a minimum IMD3 performance of -50dBc.
The RFMX5986A 10.0 GHz - 16.0 GHz I/Q image rejection mixer integrates an LO buffer amplifier. Offering a conversion loss of 8dB, 25dBc of image rejection and IIP3 performance of 25 dBm, it is an ideal partner for designers wishing to deploy a standalone MMIC or discrete LNA.
The RFUV5945A targets transmit applications and is an integrated 10.0 GHz -- 16.0 GHz upconverter comprising an I/Q image rejection mixer, LPA and LO buffer amplifier. The RFUV5945A delivers OIP3 of up to 24dBm and a conversion gain of 13dB.
RFMD's 10.0 GHz - 16.0 GHz I/Q converters deliver superior levels of integration to enable smaller radio board footprints, decreased design time and automated board assembly. The I/Q converters are ideally suited for current- and next-generation microwave radio applications.
Availability and Pricing
Samples and pre-production quantities are available now through RFMD's online store or through local RFMD sales channels. The RFUV5945A is priced at $19.97 in volumes of 10,000; the RFRX5933A is priced at $18.75 in volumes of 10,000; and the RFMX5986A is priced at $11.35 in volumes of 10,000.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties, including risks associated with the impact of global macroeconomic and credit conditions on our business and the business of our suppliers and customers, variability in operating results, the rate of growth and development of wireless markets, our reliance on inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy, assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired companies, including the risk that we may not realize expected synergies from our business combinations, our ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw material costs and availability, our ability to reduce costs and improve margins in response to declining average selling prices, our ability to bring new products to market, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, dependence on a limited number of customers, dependence on gallium arsenide (GaAs) for the majority of our products, and dependence on third parties. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and statements filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.
RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.
RF Micro Devices, Inc.
VP, Investor Relations
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