RF Micro Devices® Press Release - May 24, 2010
RFMD Unveils Portfolio of I/Q Converters for Wireless Backhaul Applications
ANAHEIM, Calif., May 24, 2010
(GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and
manufacture of high performance radio frequency components and compound semiconductor technologies, today
announced a new portfolio of 10.0 GHz - 16.0 GHz GaAs pHEMT I/Q converters. The innovative I/Q converters are the
first in a series of new microwave radio front ends to be launched by RFMD for wireless backhaul applications.
RFMD's growing portfolio of microwave radio front ends helps network operators to quickly and cost-effectively
upgrade their backhaul networks to satisfy the increasing requirements of global mobile data uptake. The broadband
frequency performance of RFMD's newest I/Q converters enables a single product to support multiple radio bands.
This allows customers to use one part across multiple radio systems, greatly simplifying inventory management.
Additionally, each new I/Q converter features I/Q mixer topologies to reduce unwanted sideband filtering and
support IF frequencies from DC to 4GHz, helping to simplify the radio design process.
available microwave radio front ends are the
RFRX5933A and the
RFRX5933A are available in a compact 5mm x 5mm QFN package, and the
RFMX5986A is offered in a fully-molded 4mm x 4mm QFN package.
RFRX5933A targets receive applications and is an integrated 10.0 GHz - 16.0 GHz downconverter comprising a low
noise amplifier (LNA), I/Q image rejection mixer and LO buffer amplifier. The broadband
RFRX5933A exhibits an impressive noise figure of 2dB while maintaining 13dB conversion gain, 25dBc of image
rejection and IIP3 performance of 3dBm. With an input power of -20dBm, the
RFRX5933A offers radio designers a minimum IMD3 performance of -50dBc.
RFMX5986A 10.0 GHz - 16.0 GHz I/Q image rejection mixer integrates an LO buffer amplifier. Offering a
conversion loss of 8dB, 25dBc of image rejection and IIP3 performance of 25 dBm, it is an ideal partner for
designers wishing to deploy a standalone MMIC or discrete LNA.
RFUV5945A targets transmit applications and is an integrated 10.0 GHz -- 16.0 GHz upconverter comprising an
I/Q image rejection mixer, LPA and LO buffer amplifier. The
RFUV5945A delivers OIP3 of up to 24dBm and a conversion gain of 13dB.
RFMD's 10.0 GHz - 16.0 GHz I/Q converters deliver superior levels of integration to enable smaller radio
board footprints, decreased design time and automated board assembly. The I/Q converters are ideally suited for
current- and next-generation microwave radio applications.
Availability and Pricing
Samples and pre-production quantities are available now through
RFMD's online store or through local RFMD sales channels. The
RFUV5945A is priced at $19.97 in volumes of 10,000; the
RFRX5933A is priced at $18.75 in volumes of 10,000; and the
RFMX5986A is priced at $11.35 in volumes of 10,000.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and
manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's
products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the
cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and
defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems
expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified
manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global
Select Market under the symbol RFMD. For more information, please visit RFMD's web site at
This press release includes "forward-looking statements" within the meaning of the
safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements
include, but are not limited to, statements about our plans, objectives, representations and contentions and are
not historical facts and typically are identified by use of terms such as "may," "will," "should," "could,"
"expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words,
although some forward-looking statements are expressed differently. You should be aware that the forward-looking
statements included herein represent management's current judgment and expectations, but our actual results,
events and performance could differ materially from those expressed or implied by forward-looking statements. We
do not intend to update any of these forward-looking statements or publicly announce the results of any revisions
to these forward-looking statements, other than as is required under the federal securities laws. RF Micro
Devices' business is subject to numerous risks and uncertainties, including risks associated with the impact of
global macroeconomic and credit conditions on our business and the business of our suppliers and customers,
variability in operating results, the rate of growth and development of wireless markets, our reliance on
inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and
customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy,
assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired
companies, including the risk that we may not realize expected synergies from our business combinations, our
ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw
material costs and availability, our ability to reduce costs and improve margins in response to declining average
selling prices, our ability to bring new products to market, our ability to adjust production capacity in a timely
fashion in response to changes in demand for our products, dependence on a limited number of customers, dependence
on gallium arsenide (GaAs) for the majority of our products, and dependence on third parties. These and other
risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form
10-K and other reports and statements filed with the Securities and Exchange Commission, could cause actual
results and developments to be materially different from those expressed or implied by any of these
RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC. All other trade names, trademarks and registered
trademarks are the property of their respective owners.
RF Micro Devices, Inc.
VP, Investor Relations
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