RFMD Announces Qualification of Second Gallium Nitride (GaN) Process Technology
RFMD to Highlight GaN Technology in Presentations at Upcoming Industry Conferences
GREENSBORO, N.C., May 10, 2010
(GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and
manufacture of high-performance RF components and compound semiconductor technologies, today announced the
successful qualification of RFMD's second high-power Gallium Nitride (GaN) process technology, expanding the
Company's industry-leading portfolio of compound semiconductor technologies.
RFMD's second high-power GaN
HEMT process technology (GaN2) achieves 1-2 dB higher gain and 6 dB greater linearity than RFMD's first high-power
GaN process technology (GaN1) at moderately lower power density. RFMD's GaN2 targets CATV broadband transmission
products and other multi-market applications and is optimized for higher linearity, higher gain and lower voltage
operation. RFMD's first high-power GaN process technology (GaN1) was qualified in the June 2009 quarter and
delivers much higher power density and voltage breakdown than competing technologies. RFMD's GaN1 is ideally
suited for high-performance devices such as power amplifiers for radar and communications.
reliability measurements confirm a useful lifetime of over 17 million hours at a channel temperature of 200 deg C.
This industry-leading reliability performance is especially noteworthy because GaN2 is an early stage process on
RFMD's GaN technology development roadmap. Additional technologies in development include MMIC process modules
with complimentary Integrated Passive Component (IPC) technology.
Bob Van Buskirk, president of RFMD's Multi-Market Products Group (MPG), said, "RFMD's high-performance GaN
technology is consistently demonstrating industry-leading levels of reliability, allowing our customers to design
GaN products that exceed their stringent system reliability specifications. RFMD's GaN technology also enables
advanced RF components and products that operate at significantly lower power consumption levels, helping to
satisfy the rapidly increasing end-market requirements for energy saving 'green technologies.'"
RFMD is scheduled to present numerous white papers on GaN technology and product development at the
upcoming Compound Semiconductor Mantech and IEEE MTT International Microwave Symposium conferences. Scheduled
presentations include: "GaN Applications Beyond the PA for RF Systems," "GaN for High Power, High Bandwidth
Applications," "Defining Application Spaces for High Power GaN," and "RFMD Takes GaN Mainstream." Industry
participants interested in learning more about RFMD's GaN technology development roadmap can visit RFMD at
Compound Semiconductor Mantech, in Portland, Oregon, on May 17-20, 2010, and at the IEEE MTT International
Microwave Symposium, in Anaheim, California, on May 25-27, 2010. For more information please visit
About RFMD RF Micro Devices, Inc. (Nasdaq:RFMD) is a global
leader in the design and manufacture of high-performance radio frequency components and compound semiconductor
technologies. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced
functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband
and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and
RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and
communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with
worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market
under the symbol RFMD. For more information, please visit RFMD's web site at
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