RF Micro Devices® Press Release - February 16, 2010
RFMD Introduces First Silicon Switches for 3G Smartphones and Other High Performance Applications
Spain, Feb 16, 2010 /PRNewswire via COMTEX News Network/ -- RF Micro Devices (Nasdaq: RFMD), a global leader in
the design and manufacture of high-performance radio frequency components and compound semiconductor technologies,
announced today that the Company has successfully qualified and released its first high power RF CMOS switch using
high-resistivity silicon substrates sourced at a leading silicon foundry. RFMD(R) is leveraging this new process
technology, as well as patent-pending design and circuit-related technology developed by RFMD, to introduce a
product portfolio of high-performance silicon switch-based products for next-generation 3G and 4G smartphones, as
well as other cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and
aerospace and defense applications.
Creviston, president of RFMD's Cellular Products Group (CPG), said, "RFMD's CMOS-based cellular switches deliver
meaningful performance, size and cost benefits, including excellent linearity and isolation capabilities, which
are critical to today's multi-band 3G handsets. We are forecasting significant customer adoption in calendar 2010
driven by leading 3G smartphone manufacturers."
Bob Bruggeworth, president and CEO of RFMD, added, "For RFMD, these new CMOS-based products - and our
entire Switch and Signal Conditioning product portfolio - highlight the increasing dollar content opportunities
available to RFMD and the continued success of our diversification efforts. Equally important, our CMOS-based
switch portfolio enables further improvement in our return on invested capital (ROIC) as we migrate technologies
and IP developed by CPG into the markets served by RFMD's multi-market products group (MPG)."
CMOS-based cellular switches meet or exceed the stringent linearity and isolation requirements of next-generation
3G and 4G smartphones while providing superior ESD performance (HBM data rated at 2000V). Also, by integrating the
controller and RF switch on the same circuit, RFMD's patent-pending circuit-related technology and the innovative
high-resistivity CMOS technology reduce product size while improving product performance. Accordingly, RFMD's
silicon switches deliver a lower cost and higher performance 3G solution than is obtainable from competing silicon
process technologies, including silicon-on-sapphire (SOS).
RFMD's first high
power CMOS-based cellular switches include the
RF1603, a single-pole, three-throw (SP3T) switch, and the
RF1604, a single-pole four throw (SP4T) switch. RFMD has sampled both products to tier one customers, and
commercial production is expected to commence in the first half of calendar 2010. Subsequent CMOS-based products
will address increasing levels of end-product complexity and will include RFMD's growing portfolio of switch
filter modules and switch duplexer modules for 3G smartphones.
RFMD offers the mobile device industry's broadest and most innovative portfolio of radio frequency
components, including cellular power amplifier modules, cellular transmit modules, cellular switch and filter
modules, and front ends for Wi-Fi, WiMAX and GPS applications. RFMD's product portfolio is on display at the 2010
Mobile World Congress in Barcelona, Spain, February 15 to February 18.
About RFMD RF Micro
Devices, Inc. (Nasdaq: RFMD) is a global leader in the design and manufacture of high-performance radio frequency
components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced
connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local
area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse
portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's
leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at
This press release includes "forward-looking statements" within the meaning of the safe
harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements
include, but are not limited to, statements about our plans, objectives, representations and contentions and are
not historical facts and typically are identified by use of terms such as "may," "will," "should," "could,"
"expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words,
although some forward-looking statements are expressed differently. You should be aware that the forward-looking
statements included herein represent management's current judgment and expectations, but our actual results,
events and performance could differ materially from those expressed or implied by forward-looking statements. We
do not intend to update any of these forward-looking statements or publicly announce the results of any revisions
to these forward-looking statements, other than as is required under the federal securities laws. RF Micro
Devices' business is subject to numerous risks and uncertainties, including risks associated with the impact of
global macroeconomic and credit conditions on our business and the business of our suppliers and customers,
variability in operating results, the rate of growth and development of wireless markets, risks associated with
the reduced investment in our wireless systems business, our ability to execute on our plans to consolidate or
relocate manufacturing operations, our reliance on inclusion in third party reference designs for a portion of our
revenue, our ability to manage channel partner and customer relationships, risks associated with the operation of
our wafer fabrication facilities, molecular beam epitaxy facility, assembly facility and test and tape and reel
facilities, our ability to complete acquisitions and integrate acquired companies, including the risk that we may
not realize expected synergies from our business combinations, our ability to attract and retain skilled personnel
and develop leaders, variability in production yields, raw material costs and availability, our ability to reduce
costs and improve margins in response to declining average selling prices, our ability to bring new products to
market, our ability to adjust production capacity in a timely fashion in response to changes in demand for our
products, dependence on a limited number of customers, dependence on gallium arsenide (GaAs) for the majority of
our products, and dependence on third parties. These and other risks and uncertainties, which are described in
more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and statements filed
with the Securities and Exchange Commission, could cause actual results and developments to be materially
different from those expressed or implied by any of these forward-looking statements.
DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks
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