RF Micro Devices® Press Release - November 9, 2010
RF Micro Devices(R) Expands Family of GaN Unmatched Power Transistors
- RFMD's High-Efficiency RF3932 Power Transistor Delivers Superior Performance Versus
GaAs and Silicon
N.C., Nov. 9, 2010 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and
manufacture of high-performance radio frequency components and compound semiconductor technologies, today
announced that RFMD® has production released the
RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers
superior performance versus competing GaAs and silicon power technologies.
The release of the
RF3932 follows the recent release of the 140-watt RF3934, which is the highest output power device in RFMD's
UPT family. RFMD plans to release a third GaN UPT device in the first calendar quarter of 2011, significantly
expanding the GaN power transistor options available to RFMD's customers.
RFMD's GaN unmatched power transistors support "green" architectures that reduce energy consumption, improve
thermal management and optimize network efficiency for network operators. The
RF3932 operates over a broad frequency range (DC to 3GHz) and delivers high peak efficiency of >65%.
RF3932 incorporates simple, optimized matching networks external to the package, providing wideband gain and
power performance advantages in a single amplifier. The
RF3932 is packaged in a hermetic, flanged ceramic two-leaded package that leverages RFMD's advanced heat sink
and power dissipation technologies to deliver excellent thermal stability and conductivity. The 75-watt
RF3932 and the 140-watt RF3934 are optimal for both driver and/or output stages, depending on overall power
Bob Van Buskirk, President of RFMD's Multi-Market Products Group (MPG), said, "RFMD is very
pleased to expand our GaN-based product portfolio, offering industry-leading power performance in support of
diverse end markets. RFMD's GaN product portfolio clearly demonstrates our commitment to technology and product
leadership, and we look forward to introducing additional GaN devices that feature superior power density, high
efficiency, rugged dependability and 'green' power consumption advantages."
RFMD's 48-volt, high
power-density GaN semiconductor process features high RF power density and efficiency, low capacitance, and high
thermal conductivity. This unique combination of features enables the development of compact and efficient high
power amplifiers (HPAs) for a broad range of applications, including private mobile radio (PMR), 3G/4G wireless
infrastructure, ISM (industrial scientific & medical), military and civilian radar and CATV transmission networks
RFMD will showcase a broad portfolio of industry-leading RF components at the electronica 2010 trade show in
Munich Germany, November 9 through November 12. Product brochures will be available at the RFMD booth (#A4.136),
and datasheets can be obtained via RFMD's website at www.rfmd.com
or by contacting RFMD at 336-664-1233.
RF3932 is currently available for sampling and mass production.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design
and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's
products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the
cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and
defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems
expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with
worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market
under the symbol RFMD. For more information, please visit RFMD's web site at
RF MICRO DEVICES(R) and RFMD(R) are
trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their
RF Micro Devices, Inc.
VP, Investor Relations