RF Micro Devices® Press Release - November 9, 2010
RF Micro Devices(R) Expands Family of GaN Unmatched Power Transistors
- RFMD's High-Efficiency RF3932 Power Transistor Delivers Superior
GaAs and Silicon Technologies
N.C., Nov. 9, 2010 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD),
a global leader in the design and manufacture of high-performance radio
frequency components and compound semiconductor technologies, today
announced that RFMD® has production released the
RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched
power transistor (UPT) that delivers superior performance versus competing
GaAs and silicon power technologies.
release of the
RF3932 follows the recent release of the 140-watt RF3934, which
is the highest output power device in RFMD's UPT family. RFMD plans
to release a third GaN UPT device in the first calendar quarter of 2011,
significantly expanding the GaN power transistor options available to
RFMD's GaN unmatched power transistors support
"green" architectures that reduce energy consumption, improve thermal
management and optimize network efficiency for network operators. The
RF3932 operates over a broad frequency range (DC to 3GHz) and delivers
high peak efficiency of >65%. Additionally, the
RF3932 incorporates simple, optimized matching networks external
to the package, providing wideband gain and power performance advantages
in a single amplifier. The
RF3932 is packaged in a hermetic, flanged ceramic two-leaded package
that leverages RFMD's advanced heat sink and power dissipation technologies
to deliver excellent thermal stability and conductivity. The 75-watt
RF3932 and the 140-watt RF3934 are optimal for both driver and/or
output stages, depending on overall power requirements.
Buskirk, President of RFMD's Multi-Market Products Group (MPG), said,
"RFMD is very pleased to expand our GaN-based product portfolio, offering
industry-leading power performance in support of diverse end markets.
RFMD's GaN product portfolio clearly demonstrates our commitment to
technology and product leadership, and we look forward to introducing
additional GaN devices that feature superior power density, high efficiency,
rugged dependability and 'green' power consumption advantages."
RFMD's 48-volt, high power-density GaN semiconductor process features
high RF power density and efficiency, low capacitance, and high thermal
conductivity. This unique combination of features enables the development
of compact and efficient high power amplifiers (HPAs) for a broad range
of applications, including private mobile radio (PMR), 3G/4G wireless
infrastructure, ISM (industrial scientific & medical), military
and civilian radar and CATV transmission networks
RFMD will showcase
a broad portfolio of industry-leading RF components at the electronica
2010 trade show in Munich Germany, November 9 through November 12. Product
brochures will be available at the RFMD booth (#A4.136), and datasheets
can be obtained via RFMD's website at
www.rfmd.com or by
contacting RFMD at 336-664-1233.
RF3932 is currently available for sampling and mass production.
RF Micro Devices, Inc. (Nasdaq:RFMD)
is a global leader in the design and manufacture of high-performance
radio frequency components and compound semiconductor technologies.
RFMD's products enable worldwide mobility, provide enhanced connectivity
and support advanced functionality in the cellular handset, wireless
infrastructure, wireless local area network (WLAN), CATV/broadband and
aerospace and defense markets. RFMD is recognized for its diverse portfolio
of semiconductor technologies and RF systems expertise and is a preferred
supplier to the world's leading mobile device, customer premises and
communications equipment providers.
Headquartered in Greensboro,
N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with
worldwide engineering, design, sales and service facilities. RFMD is
traded on the NASDAQ Global Select Market under the symbol RFMD. For
more information, please visit RFMD's web site at
RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC. All
other trade names, trademarks and registered trademarks are the property
of their respective owners.
RF Micro Devices, Inc.
VP, Investor Relations