RF Micro Devices® Press Release - November 11, 2010
RFMD Unveils High-Performance 2.3-2.7 GHz Power Amplifier IC for WiFi, WiMAX, LTE and Other Wireless
GREENSBORO, N.C., Nov. 11, 2010 (GLOBE NEWSWIRE) -- RF
Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio
frequency components and compound semiconductor technologies, today unveiled the
RF5632, a 2.3—2.7 GHz power amplifier IC. The
RF5632 is optimized specifically for WiMAX systems and can be designed into multiple applications, including
customer premises equipment (CPE), gateways, access points, LTE wireless infrastructure, and WiFi-based wireless
high definition interface (WHDI) for wireless video distribution networks.
RF5632 offers global customers a broadly applicable power amplifier IC featuring a powerful combination of
industry-leading RF performance and best-in-class product size and ease-of-use. The
RF5632 integrates a 3-stage PA and power detector into an industry-leading 4mm x 4mm QFN package,
significantly minimizing customer design footprint requirements. Additionally, the
RF5632 operates from a standard 5V supply, eliminating additional power supply requirements, enhancing design
flexibility and lowering bill-of-material costs (BOM). The
RF5632 is also fully DC and RF tested including EVM at the rated output power, maximizing application yields
and accelerating time-to-market.
RF5632 delivers an EVM of 2.5% and meets or exceeds WiMAX and LTE spectral mask requirements with an output
power of 28dBm in the 2.3—2.4GHz, 2.4—2.5GHz, and 2.5—2.7GHz frequency ranges. The bias of the PA may be
controlled to accommodate a 22dB gain step to increase the dynamic range of the system. The
RF5632 offers high gain of 34dB and high linear output power, with best-in-class efficiency. The
RF5632 maintains linearity over a wide range of temperatures and power outputs while the external match
enables tuning for output power over multiple bands. The
RF5632 also features internal input and inter-stage matching, a power-down mode and power detection. The
RF5632 features InGaP HBT semiconductor technology and is packaged in a leadless chip carrier with a backside
RFMD is showcasing the
RF5632 and other industry-leading RF components at the electronica 2010 trade show in Munich Germany, November
9 through November 12. Product brochures are available at the RFMD booth (#A4.136), and datasheets can be obtained
via RFMD's website at www.rfmd.com
or by contacting RFMD at 336-664-1233.
RF5632 starts at $3.10 per 10,000 units. Samples and production quantities are available now through RFMD's
online store or through local RFMD sales channels.
Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance radio frequency
components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced
connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local
area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse
portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's
leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with
worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market
under the symbol RFMD. For more information, please visit RFMD's web site at
RF MICRO DEVICES(R) and RFMD(R) are
trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their
RF Micro Devices, Inc.
VP, Investor Relations