RF Micro Devices® Press Release - October 29, 2010
RFMD Awarded $1.5 Million Navy Contract for GaN RF Power Technology- R&D Contract Backlog Over Next Six Quarters Increases to $5 Million
GREENSBORO, N.C., Oct 27, 2010 (GlobeNewswire via COMTEX News Network) -- RF Micro Devices (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today that it has been awarded a $1.5 million R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials, device fabrication and high power circuits.
The $1.5 million R&D contract award expands RFMD's contract backlog over the next six quarters to approximately $5 million. Since calendar 2004, RFMD has been awarded over $14.5 million in R&D contracts by the U.S. Government for development of its GaN high power RF technology.
Jeff Shealy, VP and general manager of RFMD's Defense and Power business unit, said, "GaN technology offers unprecedented performance advantages to advanced military applications, including radar, mobile communication and electronic warfare (EW) systems. Our partnership with ONR is mutually beneficial, and we are very enthusiastic about our shared mission to deploy GaN technology broadly across multiple high performance RF power applications."
Bob Bruggeworth, president and CEO of RFMD, said, "RFMD is leveraging the world's largest compound semiconductor wafer fab and captive assembly and test facilities to deliver an industry-leading supply chain for the design, packaging and test of GaN high power devices. Importantly, we utilize our scale manufacturing assets used to manufacture and ship approximately three million RF components per day, enhancing our competitive position in the high power amplifier (HPA) marketplace and increasing our ability to improve upon RFMD's return on invested capital (ROIC)."
In addition to military systems, RFMD's GaN RF power technology delivers enhanced performance to a growing number of commercial power amplifier applications, including private mobile radio (PMR), 3G/LTE wireless infrastructure and CATV transmission networks.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.
RF Micro Devices, Inc.
VP, Investor Relations
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