RF Micro Devices® Press Release - October 19, 2010
RFMD Expands Industry-Leading Portfolio of GaN-Based CATV Components
RFMD's Newest Hybrid Power Doubler Amplifier Module Delivers Unmatched
Power Savings and Design Flexibility for CATV Network Designers
ORLEANS, Oct 19, 2010 (GlobeNewswire via COMTEX News Network) -- RF
Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and
manufacture of high-performance radio frequency components and compound
semiconductor technologies, today announced availability of the RFPD2650,
a new gallium nitride-based hybrid power doubler amplifier that delivers
industry-best low distortion performance with the flexibility to optimize
for supply current or energy consumption. The RFPD2650 hybrid power
doubler amplifier module is specifically designed for CATV infrastructure
applications including hybrid fiber coaxial (HFC) optical nodes.
doublers are used in HFC networks to extend the range of signal transmission
from the head-end to the consumer. To minimize the cost of delivering
the signal to the edge of their networks, multi system operators (MSOs)
prefer to use as few amplifiers as possible. MSOs are also increasingly
seeking to minimize the operational expenses associated with the HFC
network, most notably power consumption and reliability. The RFPD2650
power doubler addresses both of these customer concerns, as does the
entire line-up of RFMD's GaN-based amplifiers.
supplies a minimum gain of 21dB over the entire 45-1003MHz frequency
range. It can deliver up to 20% power or energy savings with no performance
penalty in HFC networks, or it can be configured to provide 3dB higher
distortion level performance with the same power consumption. With this
unique blend of performance attributes, the RFPD2650 enables MSO system
designers to select either industry-leading or energy saving ("green")
performance -- all while maintaining the ease of use infrastructure
OEMs have come to expect from industry-standard SOT115J packaged amplifier
The RFPD2650 leverages GaN HEMT and GaAs pHEMT technology
to provide the industry's best distortion performance, enabling longer
range transmission. Maximum current is 450mA, and current consumption
can be reduced dramatically to less than 370mA for applications requiring
reduced distortion performance. Programmed to match the distortion level
of competitive devices, RFMD's RFPD2650 delivers two watts of power
The RFPD2650 is available now in sample
or production quantities and is priced at $26.50 in quantities of 5,000.
Interested parties can click on
http://www.rfmd.com/CS/Documents/RFPD2650DS.pdf for additional information
about the RFPD2650.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design
and manufacture of high-performance radio frequency components and compound
semiconductor technologies. RFMD's products enable worldwide mobility,
provide enhanced connectivity and support advanced functionality in
the cellular handset, wireless infrastructure, wireless local area network
(WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized
for its diverse portfolio of semiconductor technologies and RF systems
expertise and is a preferred supplier to the world's leading mobile
device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO
14001-certified manufacturer with worldwide engineering, design, sales
and service facilities. RFMD is traded on the NASDAQ Global Select Market
under the symbol RFMD. For more information, please visit RFMD's web
site at www.rfmd.com.
RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC.
All other trade names, trademarks and registered trademarks are the
property of their respective owners.
RF Micro Devices, Inc.
VP, Investor Relations
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