RF Micro Devices® Press Release - October 19, 2010
RFMD Expands Industry-Leading Portfolio of GaN-Based CATV ComponentsRFMD's Newest Hybrid Power Doubler Amplifier Module Delivers Unmatched Power Savings and Design Flexibility for CATV Network Designers
NEW ORLEANS, Oct 19, 2010 (GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced availability of the RFPD2650, a new gallium nitride-based hybrid power doubler amplifier that delivers industry-best low distortion performance with the flexibility to optimize for supply current or energy consumption. The RFPD2650 hybrid power doubler amplifier module is specifically designed for CATV infrastructure applications including hybrid fiber coaxial (HFC) optical nodes.
Power doublers are used in HFC networks to extend the range of signal transmission from the head-end to the consumer. To minimize the cost of delivering the signal to the edge of their networks, multi system operators (MSOs) prefer to use as few amplifiers as possible. MSOs are also increasingly seeking to minimize the operational expenses associated with the HFC network, most notably power consumption and reliability. The RFPD2650 power doubler addresses both of these customer concerns, as does the entire line-up of RFMD's GaN-based amplifiers.
The RFPD2650 supplies a minimum gain of 21dB over the entire 45-1003MHz frequency range. It can deliver up to 20% power or energy savings with no performance penalty in HFC networks, or it can be configured to provide 3dB higher distortion level performance with the same power consumption. With this unique blend of performance attributes, the RFPD2650 enables MSO system designers to select either industry-leading or energy saving ("green") performance -- all while maintaining the ease of use infrastructure OEMs have come to expect from industry-standard SOT115J packaged amplifier modules.
The RFPD2650 leverages GaN HEMT and GaAs pHEMT technology to provide the industry's best distortion performance, enabling longer range transmission. Maximum current is 450mA, and current consumption can be reduced dramatically to less than 370mA for applications requiring reduced distortion performance. Programmed to match the distortion level of competitive devices, RFMD's RFPD2650 delivers two watts of power consumption savings.
The RFPD2650 is available now in sample or production quantities and is priced at $26.50 in quantities of 5,000. Interested parties can click on http://www.rfmd.com/CS/Documents/RFPD2650DS.pdf for additional information about the RFPD2650.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.
RF Micro Devices, Inc.
VP, Investor Relations
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