RF Micro Devices® Press Release - October 19, 2010
RFMD Expands Industry-Leading Portfolio of GaN-Based CATV Components
RFMD's Newest Hybrid Power Doubler Amplifier Module Delivers Unmatched Power Savings and Design Flexibility
for CATV Network Designers
ORLEANS, Oct 19, 2010 (GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global
leader in the design and manufacture of high-performance radio frequency components and compound semiconductor
technologies, today announced availability of the RFPD2650, a new gallium nitride-based hybrid power doubler
amplifier that delivers industry-best low distortion performance with the flexibility to optimize for supply
current or energy consumption. The RFPD2650 hybrid power doubler amplifier module is specifically designed for
CATV infrastructure applications including hybrid fiber coaxial (HFC) optical nodes.
doublers are used in HFC networks to extend the range of signal transmission from the head-end to the consumer. To
minimize the cost of delivering the signal to the edge of their networks, multi system operators (MSOs) prefer to
use as few amplifiers as possible. MSOs are also increasingly seeking to minimize the operational expenses
associated with the HFC network, most notably power consumption and reliability. The RFPD2650 power doubler
addresses both of these customer concerns, as does the entire line-up of RFMD's GaN-based amplifiers.
RFPD2650 supplies a minimum gain of 21dB over the entire 45-1003MHz frequency range. It can deliver up to 20%
power or energy savings with no performance penalty in HFC networks, or it can be configured to provide 3dB higher
distortion level performance with the same power consumption. With this unique blend of performance attributes,
the RFPD2650 enables MSO system designers to select either industry-leading or energy saving ("green") performance
-- all while maintaining the ease of use infrastructure OEMs have come to expect from industry-standard SOT115J
packaged amplifier modules.
The RFPD2650 leverages GaN HEMT and GaAs pHEMT technology to provide the industry's best distortion
performance, enabling longer range transmission. Maximum current is 450mA, and current consumption can be reduced
dramatically to less than 370mA for applications requiring reduced distortion performance. Programmed to match the
distortion level of competitive devices, RFMD's RFPD2650 delivers two watts of power consumption savings.
The RFPD2650 is available now in sample or production quantities and is priced at $26.50 in quantities of 5,000.
Interested parties can click on
http://www.rfmd.com/CS/Documents/RFPD2650DS.pdf for additional information about the RFPD2650.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of
high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable
worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset,
wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.
RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a
preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide
engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the
symbol RFMD. For more information, please visit RFMD's web site at
RF MICRO DEVICES(R) and RFMD(R) are
trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their
RF Micro Devices, Inc.
VP, Investor Relations