RFHIC Press Release - September 29, 2010
29, 2010 - A new class-C GaN (Gallium Nitride) hybrid amplifier using GaN-on-SiC (Gallium Nitride on Silicon
carbide substrate) devices that was recently released from RFHIC. The amplifier gives VHF at 8 W in the 130~450
MHz range with an efficiency of 60%, and UHF at 6 W in the 450~960 MHz range with an efficiency of 50%. Input and
output matching circuits are included in the design with bias circuits and other matching circuits. Physical size
of the amplifier is 15 mm x 10 mm x 5.4 mm and is an SMD (surface mount device) type hybrid GaN amplifier. Input
voltage is 24 V~34 V and uses ceramic substrate over copper heat slug.
RFHIC has been using Gallium Nitride (GaN) technology since 2004. With extensive research and design experience, RFHIC accumulated technological breakthroughs in major areas such as internal matching, heat dissipation, Doherty designs, module optimization, MMIC design and package assembly. These experiences contributed to designing a better performance GaN power amplifier with lower cost for the telecommunication market. RFHIC is now working on 100 W and 500 W TETRA hybrid amplifiers. 20 W and 40 W amplifiers are already in production.
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