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29, 2010 - A new class-C GaN (Gallium Nitride) hybrid amplifier using GaN-on-SiC (Gallium Nitride on Silicon
carbide substrate) devices that was recently released from RFHIC. The amplifier gives VHF at 8 W in the 130~450
MHz range with an efficiency of 60%, and UHF at 6 W in the 450~960 MHz range with an efficiency of 50%. Input and
output matching circuits are included in the design with bias circuits and other matching circuits. Physical size
of the amplifier is 15 mm x 10 mm x 5.4 mm and is an SMD (surface mount device) type hybrid GaN amplifier. Input
voltage is 24 V~34 V and uses ceramic substrate over copper heat slug.
Existing TETRA (TErrestrial Trunked RAdio, formerly known as Trans European Trunked Radio) amplifiers use LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology and operates on 5 V~12 V supply voltage. Also previous designs separated three to four bands of 130~220 MHz, 380~400 MHz, 410~470 MHz, 560~580 MHz, and 870~933 MHz and combining loss were inevitable. Recent developments in the TETRA technology will require the use of full 100~960 MHz frequency range coverage and the new RFHIC GaN hybrid amplifier fits exactly on that application. Better efficiency amplifiers can reduce the number of the base station installations in the field for a greener environment.
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