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RFHIC Press Release - September 29, 2010

RFHIC Introduces 8W, TETRA (100~960 MHz) GaN Hybrid Amplifier


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RFHIC Introduces 8W, TETRA (100~960 MHz) GaN Hybrid AmplifierNovember 29, 2010 - A new class-C GaN (Gallium Nitride) hybrid amplifier using GaN-on-SiC (Gallium Nitride on Silicon carbide substrate) devices that was recently released from RFHIC. The amplifier gives VHF at 8 W in the 130~450 MHz range with an efficiency of 60%, and UHF at 6 W in the 450~960 MHz range with an efficiency of 50%. Input and output matching circuits are included in the design with bias circuits and other matching circuits. Physical size of the amplifier is 15 mm x 10 mm x 5.4 mm and is an SMD (surface mount device) type hybrid GaN amplifier. Input voltage is 24 V~34 V and uses ceramic substrate over copper heat slug.
 
Existing TETRA (TErrestrial Trunked RAdio, formerly known as Trans European Trunked Radio) amplifiers use LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology and operates on 5 V~12 V supply voltage. Also previous designs separated three to four bands of 130~220 MHz, 380~400 MHz, 410~470 MHz, 560~580 MHz, and 870~933 MHz and combining loss were inevitable. Recent developments in the TETRA technology will require the use of full 100~960 MHz frequency range coverage and the new RFHIC GaN hybrid amplifier fits exactly on that application. Better efficiency amplifiers can reduce the number of the base station installations in the field for a greener environment.
 

New GaN technology enables the new efficient solution to the most of the TETRA replacement amplifiers and new installations. RFHIC has developed this wideband TETRA GaN hybrid amplifier for customers who are looking for greener solutions for their system designs. One TETRA system can now cover the full 100~960 MHz band with an efficiency of 50~70%. Production yield is guaranteed with a SMD type package and all amplifiers are 100% tested and aged for immediate installation.
 
RFHIC has been using Gallium Nitride (GaN) technology since 2004. With extensive research and design experience, RFHIC accumulated technological breakthroughs in major areas such as internal matching, heat dissipation, Doherty designs, module optimization, MMIC design and package assembly. These experiences contributed to designing a better performance GaN power amplifier with lower cost for the telecommunication market. RFHIC is now working on 100 W and 500 W TETRA hybrid amplifiers. 20 W and 40 W amplifiers are already in production.

 

Please contact rfsales@rfhic.com for more product details and specifications.





For more information, contact:

RFHIC Headquarters
T:82-31-250-5079
rfsales@rfhic.com
www.rfhic.com

Sam Kim
RFHIC USA
T:919-342-6477
samkim@rfhic.com
www.rfhic.com






Posted  9/30/2010
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