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May 6, 2010 -- RFHIC Corporation recently released a 80W Gallium Nitride (GaN) power amplifier for LTE(Long Term Evolution) and WCDMA applications. Internal matched GaN on SiC (Silicon Carbide) transistor being the key building block, the amplifier shows 50dB gain at 48V. The GaN amplifier works throughout 2110-2140MHz(30MHz bandwidth) and shows 35% or higher efficiency rating by utilizing Doherty design & Digital Pre-distortion(DPD) technique. One single module includes DC/DC, detector, coupler and isolator functions within a small footprint of 170 x 175 x 28(mm). This GaN amplifier is already being deployed together with SK Telecom, the biggest Korean Mobile service provider, in selected sites.
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