Hittite's New Distributed Wideband Power Amplifiers Cover DC to 22 GHz
Chip and SMT Amplifiers are Ideal for ATE and Military Applications
MA, 08/03/2010 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for
communication & military markets, announces the release of two new chip and SMT GaAs pHEMT MMIC Power Amplifiers
which are ideal for military EW, space, and test & measurement equipment applications from DC to 22 GHz.
is a 1 Watt GaAs pHEMT MMIC Power Amplifier chip which is rated from DC to 22 GHz, and delivers 14.5 dB
gain, +31 dBm saturated output power, and +40 dBm output IP3. The
also exhibits a positive gain slope from DC to 22 GHz making it ideal for subsystems applications. The
chip consumes 400 mA from a +10 V supply and occupies only 4.48 mm2. The
is a GaAs pHEMT MMIC Power Amplifier chip which is self-biased and is rated from 0.2 to 22 GHz. It
delivers 14 dB of gain, +20.5 dBm saturated output power, and +38 dBm output IP3. Gain flatness for the
is excellent at +/- 0.6 dB from DC to 12 GHz. The HMC907 consumes 350 mA from a +10 V supply and
occupies only 3.87 mm2. Both chips feature RF I/Os that are matched to 50 Ohms which facilitates integration into
Multi-Chip Modules (MCMs).
For applications where an SMT compatible solution is preferred, the
offer similar performance to the HMC797 and HMC907, respectively. The
provides 13.5 dB of gain, +39 dBm output IP3, and +28 dBm of output power at 1 dB gain compression,
provides 12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression.
are housed in RoHS compliant 5x5 mm leadless QFN SMT packages.
die products and the
SMT packaged products are specified for operation over the -55 to +85 ºC temperature range. Die
and SMT packaged product samples as well as evaluation boards for all SMT packaged products are available from
stock and can be ordered via the company's e-commerce site or via direct purchase order. Related data sheets are
available on-line at www.hittite.com.
Hittite Microwave Corporation is an innovative designer and
manufacturer of analog, digital and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF,
microwave and millimeterwave applications covering DC to 110 GHz. Our Digital/RFIC/MMIC products are developed
using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing
MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless
/ wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave &
Millimeterwave Communications, Military, Test & Measurement, and Space markets.
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824