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MECA Electronics

Hittite Press Release - August 3, 2010

Hittite's New Distributed Wideband Power Amplifiers Cover DC to 22 GHz

Chip and SMT Amplifiers are Ideal for ATE and Military Applications

Click to visit the Hittite website

Hittite's HMC907 and HMC797Chelmsford, MA, 08/03/2010  – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, announces the release of two new chip and SMT GaAs pHEMT MMIC Power Amplifiers which are ideal for military EW, space, and test & measurement equipment applications from DC to 22 GHz.

The HMC797 is a 1 Watt GaAs pHEMT MMIC Power Amplifier chip which is rated from DC to 22 GHz, and delivers 14.5 dB gain, +31 dBm saturated output power, and +40 dBm output IP3. The HMC797 also exhibits a positive gain slope from DC to 22 GHz making it ideal for subsystems applications.  The chip consumes 400 mA from a +10 V supply and occupies only 4.48 mm2.  The HMC907 is a GaAs pHEMT MMIC Power Amplifier chip which is self-biased and is rated from 0.2 to 22 GHz.  It delivers 14 dB of gain, +20.5 dBm saturated output power, and +38 dBm output IP3.  Gain flatness for the HMC907 is excellent at +/- 0.6 dB from DC to 12 GHz.  The HMC907 consumes 350 mA from a +10 V supply and occupies only 3.87 mm2.  Both chips feature RF I/Os that are matched to 50 Ohms which facilitates integration into Multi-Chip Modules (MCMs).

For applications where an SMT compatible solution is preferred, the HMC797LP5E and HMC907LP5E offer similar performance to the HMC797 and HMC907, respectively.  The HMC797LP5E provides 13.5 dB of gain, +39 dBm output IP3, and +28 dBm of output power at 1 dB gain compression, while the HMC907LP5E provides 12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression.  The HMC797LP5E and HMC907LP5E are housed in RoHS compliant 5x5 mm leadless QFN SMT packages.

The HMC797 and HMC907 die products and the HMC797LP5E and HMC907LP5E SMT packaged products are specified for operation over the -55 to +85 ºC temperature range.  Die and SMT packaged product samples as well as evaluation boards for all SMT packaged products are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.  Related data sheets are available on-line at www.hittite.com.

About Hittite

Hittite Microwave Corporation is an innovative designer and manufacturer of analog, digital and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our Digital/RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.

Beth McGreevy
MarCom Manager
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
sales@hittite.com www.hittite.com

Posted  8/6/2010
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