Hittite Press Release - August 2, 2010
Hittite's New Amplifier Modules Deliver Ultra-Low Phase Noise
Targeting High Resolution Radar & Synthesizers from 1.5 to 11 GHz
MA 8/02/2010 - Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for
communication & military markets, has introduced a new series of GaAs HBT Ultra Low Phase Noise Amplifier modules
which are ideal for high performance applications in microwave radio, military & space, radar systems, test
instrumentation and synthesizers from 1.5 to 11 GHz. The
HMC-C079 are GaAs HBT Ultra-Low Phase Noise Amplifier modules which are rated from 7 to 11 GHz, 1.5 to 5.0
GHz, and 3 to 8 GHz, respectively.
These amplifiers provide a phase noise contribution of -180, -157 and -168 dBc/Hz at 10 kHz offset respectively,
enabling superior modulation accuracy in high resolution radar and synthesizer applications. These amplifier
modules also provide high dynamic range and exhibit 9, 14, and 11 dB of gain, 6, 4.5, and 6 dB noise figure and up
to +33, +26.5 and +25 dBm of output IP3 respectively. Also ideal for transceiver architectures, these modules
deliver up to +25, +22 and +21 dBm of saturated output power respectively with good gain flatness and minimal
variation over temperature.
Specified for -55 °C to +85 °C temperature operation and housed in miniature
hermetic modules with field replaceable SMA connectors, these modules operate from a +7 V single supply, and
consume 300, 170, and 110 mA respectively.
These modules complement Hittite's expanding line of low phase
noise amplifier products which are available in die, SMT and connectorized module formats, with frequency coverage
up to 18 GHz.
All connectorized module products are available from stock and can be ordered via the
company's e-commerce site or via direct purchase order.
Hittite Microwave Corporation is an innovative designer and manufacturer of analog, digital and mixed-signal
ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering
DC to 110 GHz. Our Digital/RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP,
SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our
custom and standard products support a wide range of wireless / wired communications and radar applications for
Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test &
Measurement, and Space markets.
Hittite Microwave Corporation
20 Alpha Road
Chelmsford, MA 01824
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